MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFH130N15X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-247AD
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IXYS 1
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AUD 15.003
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           Tube      Hiperfet
IPTC015N10NM5ATMA1


MOSFET TRENCH >=100V
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Infineon 1
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AUD 15.393
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354 A100 V1.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHDSOP - 16Cut Tape , ReelSi1 Channel- 20 V , + 20 V166 nCEnhancement  
IXFH30N85X


MOSFET 850V/40A Ultra Junction X-Class HiPerFET Power MOSFET, TO-247
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IXYS 1
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AUD 18.4086
Multiples of: 1

30 A850 V220 mOhmsN - Channel 3.5 V- 55 C+ 150 C695 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V68 nCEnhancement Hiperfet
STP65N045M9


MOSFETs N-channel 650 V, 39 mOhm typ., 55 A MDmesh M9 Power MOSFET
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STMicroelectronics 1
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AUD 20.8802
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IPW60R070CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 1
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AUD 21.5128
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31 A600 V57 mOhmsN - Channel 3.5 V- 55 C+ 150 C156 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V67 nCEnhancement Coolmos
IPT111N20NFDATMA1


MOSFET TRENCH >=100V
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Infineon 1
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AUD 21.9206
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96 A200 V11.1 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSmd/SmtPG - HSOF - 8Cut TapeSi1 Channel10 V65 nCEnhancement Optimos
IXFH150N25X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-247AD
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IXYS 1
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AUD 22.0239
Multiples of: 1

           Tube      Hiperfet
STWA88N65M5


STMicroelectronics MOSFET N-Ch 650 V 0.024 Ohm 84 A MDmesh(TM)
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STMicroelectronics 1
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AUD 22.3399
Multiples of: 1

84 A650 V24 mOhmsN - Channel 4 V- 55 C+ 150 C450 WThrough HoleTO - 247 - 3TubeSi1 Channel- 25 V , 25 V240 nCEnhancement MDmesh
STWA75N60M6


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 1
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AUD 22.5371
Multiples of: 1

72 A600 V36 mOhmsN - Channel 3.25 V- 55 C+ 150 C446 WThrough HoleTO - 247 - 3TubeSi1 Channel- 25 V , 25 V106 nCEnhancement MDmesh
IXTT220N20X4HV


MOSFET Discrete MOSFET 220A 200V X4 TO268HV
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IXYS 1
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AUD 29.6179
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220 A200 V5.5 mOhmsN - Channel 4.5 V- 55 C+ 175 C800 WSMD/SMTTO - 268 - 3TubeSi1 Channel- 20 V , + 20 V157 nCEnhancement  
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