MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STW58N65DM2AG


MOSFET Automotive-grade N-channel 650 V, 0.051 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package
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STMicroelectronics 1
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AUD 23.8053
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48 A650 V65 mOhmsn - channel 4 V- 55 C+ 150 C360 Wthrough holeTO - 247 - 3 si1 channel+/- 25 V88 nCenhancementaec - q101mdmesh
STB42N65M5


STMicroelectronics MOSFET N-ch 650 Volt 33Amp
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STMicroelectronics 1
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AUD 24.4969
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33 A650 V79 mOhmsN - Channel  - 55 C+ 150 C190 WSmd/SmtD2PAK - 3ReelSi1 Channel25 V Enhancement Mdmesh
IPP410N30N


MOSFET TRENCH >=100V
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Infineon 1
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AUD 28.3048
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STWA75N65DM6


MOSFETs N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET
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STMicroelectronics 1
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AUD 28.9009
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75 A650 V36 mOhmsN - Channel 4.75 V- 55 C+ 150 C480 WThrough Hole TubeSi1 Channel- 25 V , 25 V118 nCEnhancement  
IPW60R060C7


MOSFET HIGH POWER_NEW
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Infineon 1
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AUD 29.5195
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IXFK230N20T


MOSFET 230A 200V
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IXYS 1
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AUD 36.3985
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230 A200 V7.5 mOhmsN - Channel 5 V- 55 C+ 175 C1.67 kWThrough HoleTO - 264 - 3TubeSi1 Channel- 20 V , 20 V358 nCEnhancement HiPerFET
IXFK250N10P


MOSFET Polar Power MOSFET HiPerFET
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IXYS 1
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AUD 38.1134
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250 A100 V6.5 mOhmsN - Channel 5 V- 55 C+ 175 C1.25 kWThrough HoleTO - 264 - 3TubeSi1 Channel20 V205 nCEnhancement Hiperfet
MS340N07HGF4


SOT-227 MOSFETs ROHS
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MASPOWER 1
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AUD 41.0147
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NTE2993


Transistor: N-MOSFET; 400V; 14A; TO3
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NTE 1
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AUD 49.8776
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IXFL210N30P3


MOSFET N-Channel: Power MOSFET w/Fast Diode
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IXYS 0
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AUD 25.597
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108 A300 V16 mOhmsN - Channel     Through HoleTO - 264 - 3TubeSi1 Channel    Hiperfet
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