MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSD4076DN56


40V 76A 1.7W 6.9m@10V,12A 2.5V@250uA 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Winsok 295
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AUD 0.4008
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CSD18536KTTT


MOSFET 60-V, N channel NexFET power MOSFET, single D2PAK, 1.6 mOhm 3-DDPAK/TO-263 -55 to 175
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Texas Instruments 285
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AUD 7.2299
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200 A60 V1.3 mOhmsN - channel 1.8 V- 55 C+ 175 C375 WSmd/smtTO - 263 - 3Reel-1_Channel+/- 20 V140 nCEnhancement Nexfet
IPT020N10N5


MOSFET TRENCH >=100V
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Infineon 285
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AUD 5.3915
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WM02N25M


Transistor: N-MOSFET; unipolar; SOT23
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Wayon 284
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AUD 0.0439
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FQD5N60CTM-VB


650V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 284
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AUD 0.7749
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FDP070AN06A0


Fairchild Semiconductor MOSFET N-Channel PwrTrench
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ON Semiconductor 284
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AUD 1.981
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15 A60 V7 mOhmsN - Channel20 V - 55 C+ 175 C175 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Powertrench
IXTA2N100P


MOSFET 2 Amps 1000V 7.5 Rds
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IXYS 284
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AUD 4.1373
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2 A1 kV7.5 OhmsN - Channel  - 55 C+ 150 C86 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V Enhancement  
FCH077N65F_F085


Fairchild Semiconductor MOSFET 650V N-Channel SuperFET II MOSFET
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ON Semiconductor 284
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AUD 8.0484
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54 A650 V184 mOhmsN - Channel 3 V- 55 C+ 150 C481 WThrough HoleTO - 247 - 3TubeSi1 Channel+/- 20 V126 nCEnhancement Superfet Ii
IXFH50N60P3


N-Channel 600 V 50A (Tc) 1040W (Tc) Through Hole TO-247AD (IXFH)
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IXYS 272
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AUD 11.2299
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50 A600 V145 mOhmsn - channel 5 V  1040 Wthrough holeTO - 247 - 3Tubesi1 channel30 V94 nC  hiperfet
IPP65R190CFD


MOSFET CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET
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Infineon 260
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AUD 3.1513
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17.5 A650 V190 mOhmsN - Channel30 V4 V  151 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V68 nC  Coolmos
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