MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFIBE30GPBF


N-Channel 800 V 2.1A (Tc) 35W (Tc) Through Hole TO-220-3
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Vishay 487
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AUD 2.1731
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   N Channel       Tube       
IPP45N06S4L-08


Infineon Technologies MOSFET N-Ch 60V 45A TO220-3 OptiMOS-T2
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Infineon 287
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AUD 1.1019
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45 A60 V7.9 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel    Optimos
WMB010N04LG4


Transistor: N-MOSFET; unipolar; PDFN5060-8
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Wayon 287
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AUD 1.2851
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IPA60R145CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 287
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AUD 2.2328
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9 A600 V145 mOhmsN - Channel 3.5 V- 55 C+ 150 C27 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V31 nCEnhancement  
BSC110N15NS5ATMA1


150V 76A 125W 11mO@38A,10V N Channel TDSON-8-7 MOSFETs ROHS
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Infineon 287
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AUD 2.4571
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76 A150 V11 mOhmsN - Channel 3 V- 55 C+ 150 C125 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V28 nCEnhancement Optimos
CSD19531Q5AT


N-Channel 100 V 100A (Ta) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)
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Texas Instruments 287
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AUD 2.8418
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100 A100 V6.4 mOhmsN - Channel 2.7 V- 55 C+ 150 C3.3 WSmd/SmtVSONP - 8Cut TapeSi1 Channel20 V37 nCEnhancement Nexfet
IXFA22N60P3


MOSFET
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IXYS 287
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AUD 5.5582
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                  Hiperfet
IXFX27N80Q


MOSFET 27 Amps 800V 0.32 Rds
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IXYS 287
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AUD 40.9552
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27 A800 V320 mOhmsN - Channel 4.5 V- 55 C+ 150 C500 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V170 nCEnhancement Hyperfet
IXFH94N30P3


MOSFET N-Channel: Power MOSFET w/Fast Diode
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IXYS 267
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AUD 14.7761
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94 A300 V36 mOhmsN - Channel     Through HoleTO - 247 - 3TubeSi1 Channel    Hiperfet
IRF3808PBF


Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
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Infineon 238
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AUD 1.6891
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140 A75 V7 mOhmsN - Channel    330 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V150 nC   
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