MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP4N150


Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
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STMicroelectronics 9684
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AUD 4.5049
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IPI60R280C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
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Infineon 291
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AUD 2.3924
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            Coolmos C6      
IXTP05N100M


MOSFET 0.5 Amps 1000V
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IXYS 291
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AUD 3.809
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700 mA1 kV15 Ohmsn - channel 4.5 V- 55 C+ 150 C25 Wthrough holeTO - 220 - 3Tubesi1 channel30 V7.8 nCenhancement  
R6024ENZC17


MOSFET 600V 24A TO-3PF, Low-noise Power MOSFET
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ROHM 291
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AUD 4.6791
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24 A600 V165 mOhmsN - Channel 4 V- 55 C+ 150 C120 WThrough HoleTO - 3PF - 3TubeSi1 Channel- 20 V , + 20 V70 nCEnhancement  
R6524KNZC17


MOSFET 650V 24A TO-3PF, High-speed switching Power MOSFET
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ROHM 291
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AUD 5.7308
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24 A650 V185 mOhmsN - Channel 5 V- 55 C+ 150 C74 WThrough HoleTO - 3PF - 3TubeSi1 Channel- 20 V , + 20 V45 nCEnhancement  
IXTA180N10T


MOSFET 180 Amps 100V 6.1 Rds
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IXYS 291
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AUD 7.2507
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180 A100 V6.4 mOhmsn - channel  - 55 C+ 175 C480 Wsmd/smtTO - 263 - 3Tubesi1 channel  enhancement hiperfet
IXTH3N100P


MOSFET 3 Amps 1000V
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IXYS 291
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AUD 7.9403
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3 A1 kV4.8 OhmsN - Channel  - 55 C+ 150 C125 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement  
IXTH30N50P


MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
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IXYS 291
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AUD 9.4896
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30 A500 V165 mOhmsn - channel 5 V- 55 C+ 150 C460 Wthrough holeTO - 247 - 3Tubesi1 channel30 V70 nCenhancement polarhv
ASA65R120EFD


655V 30A 36.5W 105m 4V 1 N-Channel TO-220F MOSFETs ROHS
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ANHI 290
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AUD 2.5277
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IXFH160N15T2


MOSFET Trench T2 HiperFET Power MOSFET
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IXYS 139
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AUD 7.9392
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160 A150 V9 mOhmsN - Channel 4.5 V- 55 C+ 175 C880 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V253 nCEnhancement Hiperfet
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