MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS6890A


Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; 2W; SO8
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ON Semiconductor 291
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AUD 1.0586
Multiples of: 1

            Powertrench®      
IPD60R800CE


MOSFET CONSUMER
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Infineon 291
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AUD 1.0754
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FDMS86105


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 291
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AUD 1.4739
Multiples of: 1

6 A100 V34 mOhmsn - channel   + 150 C48 Wsmd/smtPOWER - 56Reelsi1 channel    powertrench
STP6N80K5


STMicroelectronics MOSFET
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STMicroelectronics 291
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AUD 1.5451
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4.5 A800 V1.6 OhmsN - Channel30 V4 V- 55 C+ 150 C85 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V13 nCEnhancement Mdmesh
HSX044N25


250V 55A 350W 34m@10V,5A 5V@250uA 1 N-Channel TO-247 MOSFETs ROHS
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HUASHUO 291
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AUD 2.2053
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IXTY01N100


MOSFET 0.1 Amps 1000V 80 Rds
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IXYS 291
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AUD 2.3478
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100 mA1 kV80 Ohmsn - channel  - 55 C+ 150 C25 Wsmd/smtTO - 252 - 3Tubesi1 channel20 V enhancement  
IPP60R125P6XKSA1


MOSFET HIGH POWER PRICE/PERFORM
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Infineon 291
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AUD 2.3759
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           Tube       
R8002ANX


N-Channel 800 V 2A (Tc) 35W (Tc) Through Hole TO-220FM
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ROHM 291
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AUD 2.3753
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2 A800 V4.3 OhmsN - Channel    35 WThrough HoleTO - 220BulkSi1 Channel30 V12.7 nC   
HUF75645P3


Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB
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ON Semiconductor 291
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AUD 2.9252
Multiples of: 50

            Ultrafet®      
S150P06T


TO-220 MOSFETs ROHS
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HL 0
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AUD 1.2845
Multiples of: 1

                   
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