MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP14N60P


MOSFET 14.0 Amps 600 V 0.55 Ohm Rds
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IXYS 290
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AUD 4.4
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14 A600 V450 mOhmsn - channel 5.5 V- 55 C+ 150 C300 Wthrough holeTO - 220 - 3Tubesi1 channel30 V36 nCenhancement polarhv
IXTQ60N20T


Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3)
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IXYS 290
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AUD 3.6643
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60 A200 V40 mOhmsN - Channel 3 V- 55 C+ 175 C500 WThrough HoleTO - 3PTube  20 V   Trench
IXFP7N100P


MOSFET 7 Amps 1000V
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IXYS 290
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AUD 9.5284
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7 A1 kV1.9 OhmsN - Channel  - 55 C+ 150 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V   Hyperfet
IXTH30N60P


N-Channel 600 V 30A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)
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IXYS 290
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AUD 11.0328
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30 A600 V240 mOhmsN - Channel 5 V- 55 C+ 150 C540 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V82 nCEnhancement PolarHV
IXTA15N50L2


MOSFET MSFT N-CH LINEAR L2
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IXYS 290
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AUD 17.1952
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15 A500 V480 mOhmsN - Channel 2.5 V- 55 C+ 150 C300 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V123 nCEnhancement Linearl2
IXFR32N80Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A
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IXYS 290
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AUD 45.7731
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24 A800 V300 mOhmsn - channel   + 150 C500 Wthrough holeTO - 247 - 3Tubesi1 channel30 V140 nC  hiperfet
WMQ040N03LG2


Transistor: N-MOSFET; unipolar; PDFN3030-8
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Wayon 289
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AUD 0.3594
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FDS6673BZ-NL-VB


30V 13.5A 11mΩ@10V P Channel SOP8 MOSFETs ROHS
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VBsemi Elec 289
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AUD 0.4896
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NCE40H12


MOSFET N Trench 40V 120A (Tc) 2.5V @ 250uA 4 mΩ @ 20A,10V TO-220 RoHS
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NCE Power 289
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AUD 0.669
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IPAN60R650CEXKSA1


MOSFET
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Infineon 289
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AUD 0.6813
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 650 V        TO - 220FP - 3TubeSi     Coolmos
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