MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MDD3752RH


TO-252-3 MOSFETs ROHS
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VBsemi Elec 291
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AUD 0.6049
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IRL3803STRRPBF


Infineon IR MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC
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Infineon 289
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AUD 1.8364
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140 A30 V9 mOhmsn - channel  - 55 C+ 175 C200 Wsmd/smtTO - 252 - 3Reelsi1 channel16 V93.3 nCenhancement  
WMM16N60FD


Transistor: N-MOSFET; SJ-MOSFET FD; unipolar; 600V; 13A; 86W; TO263
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Wayon 289
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AUD 1.8806
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            Sj - Mosfet Fd      
IPA60R299CPXKSA1


Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
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Infineon 289
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AUD 2.0677
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            Coolmos Cp      
RCX511N25


MOSFET 10V Drive Nch MOSFET
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ROHM 289
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AUD 2.4955
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51 A250 V48 mOhmsN - Channel 3 V- 55 C+ 150 C84 WThrough HoleTO - 220FP - 3Tape And ReelSi1 Channel30 V120 nCEnhancement  
FCH072N60


Fairchild Semiconductor MOSFET
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ON Semiconductor 289
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AUD 9.7687
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52 A600 V72 mOhmsn - channel 3.5 V- 55 C+ 150 C481 Wthrough holeTO - 247 - 3Tubesi1 channel20 v , 30 V95 nC  superfet ii
TSM60NE048PW C0G


MOSFETs 600V, 61A, Single N-Channel High Voltage MOSFETs
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Taiwan Semiconductor 289
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AUD 13.1343
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61 A600 V48 mOhmsN - Channel 6 V- 55 C+ 150 C431 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , + 30 V114 nCEnhancement  
FCH060N80_F155


MOSFET SuperFET2 800V
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ON Semiconductor 289
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AUD 18.619
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58 A800 V54 mOhmsN - Channel 2.5 V- 55 C+ 150 C500 WThrough HoleTO - 247 - 3BulkSi1 Channel+/- 20 V350 nCEnhancement  
IXFX24N100Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A
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IXYS 289
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AUD 36.0866
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24 A1 kV440 mOhmsn - channel    1 kWthrough holeTO - 247 - 3Tubesi1 channel30 V140 nC  hiperfet
TK11A65W,S5X(M


MOSFET N Trench 650V 11.1A 3.5V @ 450uA 390 mO @ 5.5A,10V TO-220SIS RoHS
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Toshiba 288
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AUD 1.166
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