MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB155N3LH6


MOSFET N-channel 30V 0.0024 Ohm, 80 A, D2PAK
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STMicroelectronics 5820
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AUD 1.3489
Multiples of: 1000

80 A30 V3 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtD2PAKReelSi1 Channel20 V80 nCEnhancementAec - Q101Stripfet
CJU65P06


TO-252-2L MOSFETs ROHS
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Changjing Electronics Technology 2993
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AUD 0.9109
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TK11S10N1L,LQ


MOSFET PWR MOSFET PD=65W F=1MHZ
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Toshiba 308
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AUD 0.5876
Multiples of: 1

11 A100 V28 mOhmsN - Channel 1.5 V- 55 C+ 175 C65 WSmd/SmtDPAK - 3Cut TapeSi1 Channel10 V15 nCEnhancement U - Mosviii - H
R6007ENJTL


Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) LPTS T/R
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ROHM 288
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AUD 1.4584
Multiples of: 1

7 A600 V570 mOhmsN - Channel 2 V- 55 C+ 150 C78 WSmd/SmtTO - 263 - 3Tape And ReelSi1 Channel30 V20 nCEnhancement  
IRF6726MTRPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
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Infineon 288
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AUD 2.2985
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180 A30 V1.7 mOhmsN - Channel 1.7 V- 40 C+ 150 C89 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V51 nC   
R6515KNZC17


MOSFET 650V 15A TO-3PF, High-speed switching Power MOSFET
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ROHM 288
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AUD 4.4808
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15 A650 V315 mOhmsN - Channel 5 V- 55 C+ 150 C60 WThrough HoleTO - 3PF - 3TubeSi1 Channel- 20 V , + 20 V27.5 nCEnhancement  
STW34NM60N


Transistor: N-MOSFET; unipolar; 600V; 20A; 250W; TO247
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STMicroelectronics 288
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AUD 7.209
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            mdmesh      
IXFH170N25X3


MOSFET 250V/170A Ultra Junc tion X3-Class MOSFET
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IXYS 288
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AUD 30.6328
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170 A250 V6.1 mOhmsN - Channel 2.5 V- 55 C+ 150 C960 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V190 nCEnhancement Hiperfet
IPP60R180CM8XKSA1


MOSFETs HIGH POWER_NEW
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Infineon 283
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AUD 1.5416
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19 A600 V180 mOhmsN - Channel 4.7 V- 55 C+ 150 C142 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V17 nCEnhancement CoolMOS
DMNH6042SSDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 89
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AUD 0.8258
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          SO - 8Cut TapeSi    Aec - Q101 
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