MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP440PBF


MOSFET RECOMMENDED ALT 844-IRFP440PBF
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Vishay 951
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AUD 2.4254
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         Through HoleTO - 247 - 3TubeSi      
IXFP10N80P


MOSFET 10 Amps 800V 1.1 Rds
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IXYS 283
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AUD 5.8448
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10 A800 V1.1 Ohmsn - channel 5.5 V- 55 C+ 150 C300 Wthrough holeTO - 220 - 3Tubesi1 channel30 V40 nCenhancement hiperfet
IXFP34N65X2


MOSFET 650V/34A Ultra Junction X2-Class
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IXYS 283
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AUD 6.6657
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34 A650 V105 mOhmsN - Channel 2.7 V- 55 C+ 150 C540 WThrough HoleTO - 220 - 3TubeSi 30 V56 nCEnhancement Hiperfet
IXTQ64N25P


MOSFET 64 Amps 250V 0.049 Rds
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IXYS 283
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AUD 7.1254
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64 A250 V49 mOhmsN - Channel  - 55 C+ 150 C400 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V Enhancement  
IXTK170N10P


MOSFET 170 Amps 100V 0.009 Ohm Rds
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IXYS 283
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AUD 17.3015
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170 A100 V9 mOhmsN - Channel  - 55 C+ 175 C714 WThrough HoleTO - 264 - 3TubeSi1 Channel20 V Enhancement  
IXFB110N60P3


MOSFET 600V 110A 0.056Ohm PolarP3 Power MOSFET
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IXYS 283
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AUD 31.3746
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110 A600 V56 mOhmsn - channel 5 V  1.89 kWthrough holePLUS - 264 - 3Tubesi1 channel30 V245 nC  hyperfet
KIA3402


MOSFET N Trench 30V 4A 1.6V @ 250uA 70mΩ @ 4A,10V SOT-23 (SOT-23-3) RoHS
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KIA 282
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AUD 0.0824
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Hot IRFI9630GPBF


MOSFET RECOMMENDED ALT 844-IRFI9630GPBF
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Vishay 282
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AUD 1.4209
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   P Channel      TO - 220 - 3Tube       
IXTP1R4N100P


MOSFET 1.4 Amps 1000V 11 Rds
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IXYS 282
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AUD 3.0701
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1.4 A1 kV11 Ohmsn - channel  - 55 C+ 150 C63 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement  
IXTQ82N25P


MOSFET 82 Amps 250V 0.035 Rds
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IXYS 80
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AUD 6.4965
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82 A250 V35 mOhmsN - Channel  - 55 C+ 150 C500 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V Enhancement  
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