MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPG20N06S2L-35


Infineon Technologies MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
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Infineon 281
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AUD 2.2396
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20 A55 V35 mOhmsN - Channel   + 175 C65 WSmd/SmtTDSON - 8ReelSi2 Channel20 V  Aec - Q101Optimos
AP8600S


MOSFET N Trench 80V 80A (Tc) 5V @ 250uA 5 mΩ @ 40A,10V TO-263 RoHS
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APEC 280
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AUD 1.5825
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IRFSL7762PBF


International Rectifier MOSFET 75V Single N-Channel HEXFET
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Infineon 280
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AUD 1.9375
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85 A75 V5.6 mOhmsn - channel 2.1 V- 55 C+ 175 C140 Wthrough holeTO - 262 - 3Tubesi1 channel20 V85 nCenhancement strongirfet
APG028N10


100V 210A 2.2m@20V,210A 1PCSNChannel TO-220C MOSFETs ROHS
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Quan Li 280
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AUD 4.2003
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R6025JNZC17


MOSFET 600V 25A TO-3PF, PrestoMOS™ with integrated high-speed diode
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ROHM 280
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AUD 6.3537
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25 A600 V182 mOhmsN - Channel 7 V- 55 C+ 150 C85 WThrough HoleTO - 3PF - 3TubeSi1 Channel- 30 V , + 30 V57 nCEnhancement  
R6030KNZC17


MOSFET 600V 30A TO-3PF, High-speed switching Power MOSFET
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ROHM 280
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AUD 6.6657
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30 A600 V130 mOhmsN - Channel 5 V- 55 C+ 150 C86 WThrough HoleTO - 3PF - 3TubeSi1 Channel- 20 V , + 20 V56 nCEnhancement  
IXFH10N100P


MOSFET 10 Amps 1000V
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IXYS 280
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AUD 8.2418
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10 A1 kV1.4 OhmsN - Channel 6.5 V- 55 C+ 150 C380 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V56 nCEnhancement Polar, Hiperfet
Hot ZVN4424GTA


N-Channel 240 V 500mA (Ta) 2.5W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 279
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AUD 0.4304
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   N - channel  - 55 C+ 150 C Smd/smtSOT - 223Reel       
NJS60R130F


TO-220F MOSFETs ROHS
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NH 274
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AUD 1.4181
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IRFR3910TRLPBF


Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
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Infineon 182
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AUD 0.3975
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15 A100 V115 mOhmsN - Channel    52 WSmd/SmtDPAKReelSi1 Channel20 V29.3 nC   
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