MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTD5807NT4G-VB


40V 55A 13mΩ@10V N Channel TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 279
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AUD 0.4433
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STW28NM60ND


Transistor: N-MOSFET; unipolar; 600V; 14.5A; 190W; TO247
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STMicroelectronics 279
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AUD 5.0731
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            Mdmesh      
WMJ36N60C4


TO-247 MOSFETs ROHS
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Wayon 279
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AUD 5.7045
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IRF7905TRPBF-VB


30V 8.5A 16mΩ@10V 2 N-Channel SOP8 MOSFETs ROHS
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VBsemi Elec 278
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AUD 0.3456
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WMK25N10T1


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 278
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AUD 0.4848
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MT06N008A


TO-220C MOSFETs ROHS
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Jilin 278
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AUD 1.1449
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IXTQ42N25P


MOSFET 42 Amps 250V 0.084 Rds
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IXYS 278
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AUD 5.0896
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42 A250 V84 mOhmsN - Channel 5.5 V- 55 C+ 150 C300 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V70 nCEnhancement Polarht
FCA22N60N


MOSFET 600V N-Channel SupreMOS
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ON Semiconductor 278
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AUD 7.0769
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22 A650 V140 mOhmsN - Channel  - 55 C+ 150 C205 WThrough HoleTO - 3PNTubeSi1 Channel30 V Enhancement Supremos
TSM60NE084PW C0G


MOSFETs 600V, 42A, Single N-Channel High Voltage MOSFETs
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Taiwan Semiconductor 278
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AUD 8.1925
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42 A600 V84 mOhmsN - Channel 6 V- 55 C+ 150 C357 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , + 30 V68 nCEnhancement  
FDPF12N60NZ


MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE
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ON Semiconductor 267
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AUD 2.1063
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220FTube       
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