MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3416


20V 7.5A 13m@4.5V,7.5A 1.39W 700mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 26370
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AUD 0.0513
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STP28N60DM2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 277
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AUD 4.0476
Multiples of: 1

22 A600 V0.13 Ohmsn - channel 3 V- 55 C+ 150 C190 Wthrough holeTO - 220 - 3 si1 channel+/- 25 V39 nCenhancement mdmesh
IXTH24N50L


MOSFET 24 Amps 500V 0.30 Ohms Rds
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IXYS 276
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AUD 50.9448
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24 A500 V300 mOhmsn - channel 5 V- 55 C+ 150 C400 Wthrough holeTO - 247 - 3Tubesi1 channel30 V160 nCenhancement  
HS1195


30V 8.5A 25mΩ@10V 2.5V 2 P-Channel SOP-8 MOSFETs ROHS
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HXY MOS 275
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AUD 0.1723
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SWF7N65D


650V 7A 1.1Ω TO-220F MOSFETs ROHS
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Sam&wing 275
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AUD 0.3367
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SI9948AEY-T1-E3


60V 5.3A 4W 54mO@10V,6.3A 2 P-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 275
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AUD 1.1757
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R8010ANX


ROHM Semiconductor MOSFET
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ROHM 275
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AUD 3.3187
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10 A800 V560 mOhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleTO - 220 - FP - 3BulkSi1 Channel30 V62 nCEnhancement  
15N10 TO252


100V 15A 114mO@10V,15A N Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 226
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AUD 0.411
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TK9R6E15Q5,S1X


MOSFETs 150V UMOS10-HSD TO-220 9.6mohm
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Toshiba 217
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AUD 2.8239
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52 A150 V9.6 mOhmsN - Channel 4.5 V- 55 C+ 175 C200 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V50 nCEnhancement  
RCX330N25


MOSFET Nch 250V 33A MOSFET
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ROHM 215
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AUD 2.791
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33 A250 V105 mOhmsN - Channel   + 150 C40 WThrough HoleTO - 220 - 3 FPBulkSi      
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