MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HYG055N08NS1C2


PPAK5x6-8L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HuaYi 344
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AUD 0.5334
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WMJ40N50D1


Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 416W
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Wayon 281
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AUD 4.4299
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            WMOS D1      
CSD19536KCS


N-Channel 100 V 150A (Ta) 375W (Tc) Through Hole TO-220-3
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Texas Instruments 281
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AUD 6.0179
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259 A100 V2.7 mOhmsN - Channel 2.1 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V118 nCEnhancement Nexfet
IXFH120N25X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-247AD
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IXYS 281
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AUD 20.3731
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120 A250 V12 mOhmsN - Channel 2.5 V- 55 C+ 150 C480 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , 20 V122 nCEnhancement HiPerFET
FDD6630A-VB


30V 70A 7m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 280
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AUD 0.3266
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SUD25N06-45L-E3-VB


60V 35A 25mΩ@10V N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 280
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AUD 0.4433
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APM8010KC-TRL-VB


100V 6.4A 40mΩ@10V N Channel SO-8 MOSFETs ROHS
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VBsemi Elec 280
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AUD 0.5386
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WML28N65F2


TO-220F MOSFETs ROHS
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Wayon 280
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AUD 1.2341
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IXFH34N50P3


MOSFET Polar3 HiPerFET Power MOSFET
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IXYS 223
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AUD 12.8507
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34 A500 V180 mOhmsN - Channel     Through HoleTO - 247 - 3TubeSi     Hiperfet
STP6N62K3


Transistor: N-MOSFET; unipolar; 620V; 3A; 30W; TO220-3
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STMicroelectronics 175
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AUD 1.3036
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