MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WMJ80R350S


Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W
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Wayon 286
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AUD 5.3075
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            WMOS S      
IXTH24P20


MOSFET -24 Amps -200V 0.15 Rds
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IXYS 286
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AUD 12.4284
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24 A200 V150 mOhmsp - channel 5 V- 55 C+ 150 C300 Wthrough holeTO - 247 - 3Tubesi1 channel20 V150 nCenhancement  
IXFR48N60P


MOSFET 600V 48A
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IXYS 286
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AUD 27.6866
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32 A600 V150 mOhmsn - channel  - 55 C+ 150 C300 Wthrough holeTO - 247 - 3Tubesi1 channel30 V enhancement hiperfet
IXFK32N100P


MOSFET 32 Amps 1000V 0.32 Rds
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IXYS 286
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AUD 31.2761
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32 A1 kV320 mOhmsN - Channel 6.5 V- 55 C+ 150 C960 WThrough HoleTO - 264 - 3TubeSi1 Channel- 30 V , 30 V225 nCEnhancement HiPerFET
DMN63D8LV-7


MOSFET Dual N-Ch Enh Mode 30V 4.2Ohm 200mA
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Diodes Incorporated 285
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AUD 0.0982
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260 mA30 V2.8 OhmsN - Channel 800 mV- 55 C+ 150 C450 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel10 V0.87 nCEnhancement  
NCE65T540F


MOSFET N Trench 650V 8A (Tc) 4V @ 250uA 540 mΩ @ 4A,10V TO-220F (TO-220IS) RoHS
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NCE Power 285
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AUD 0.6631
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NDF08N60ZG


MOSFET 600V 0.95 OHM TO- 220FP
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ON Semiconductor 285
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AUD 0.7926
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7.5 A600 V950 mOhmsN - Channel 4.5 V- 55 C+ 150 C35 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel30 V39 nC   
MLS65R190W


TO-247 MOSFETs ROHS
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Minos 285
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AUD 2.1507
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STW20NK50Z


Transistor: N-MOSFET; unipolar; 500V; 12.6A; 190W; TO247
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STMicroelectronics 285
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AUD 2.8167
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            Mdmesh      
TK7R4A15Q5,S4X


MOSFETs 150V UMOS10-HSD TO-220SIS 7.4mohm
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Toshiba 285
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AUD 3.3821
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57 A150 V7.4 mOhmsN - Channel 4.5 V- 55 C+ 175 C46 WThrough HoleTO - 220SIS - 3TubeSi1 Channel- 20 V , + 20 V66 nCEnhancement  
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