MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS7698-HXY


30V 50A 6.5mΩ 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 286
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AUD 0.3109
Multiples of: 5

                   
SUD19P06-60-GE3-HXY


60V 30A 48m 1PCSPChannel TO-252-2L MOSFETs ROHS
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HXY MOS 286
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AUD 0.3174
Multiples of: 5

                   
TMGN4060NF


PDFN5x6-8L MOSFETs ROHS
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Tritech-MOS 286
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AUD 0.3546
Multiples of: 5

                   
SWP078R08E8T


80V 95A TO-220 MOSFETs ROHS
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Sam&wing 286
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AUD 0.3667
Multiples of: 1

                   
SWY4N60D


600V 4A TO-220FT MOSFETs ROHS
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Sam&wing 286
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AUD 0.3683
Multiples of: 5

                   
SWM10N60D


650V 10A 900mΩ TO-220MF MOSFETs ROHS
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Sam&wing 286
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AUD 0.4161
Multiples of: 1

                   
SWM10N65D


650V 10A 900mΩ TO-220MF MOSFETs ROHS
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Sam&wing 286
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AUD 0.4161
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NTP6410ANG


MOSFET NFET TO220 100V 76A 13MOH
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ON Semiconductor 286
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AUD 3.0045
Multiples of: 1

76 A100 V11 mOhmsN - Channel 4 V- 55 C+ 175 C188 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
IXTP160N10T


100V 160A 7mO@10V,25A 430W N Channel TO-220 MOSFETs ROHS
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IXYS 286
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AUD 4.6299
Multiples of: 1

160 A100 V7 mOhmsN - Channel  - 55 C+ 175 C430 WThrough HoleTO - 220 - 3TubeSi1 Channel  Enhancement Hiperfet
DMTH10H010LCTB-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 272
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AUD 1.2313
Multiples of: 1

         Through HoleTO - 220 - 3Cut TapeSi      
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