MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIRA10BDP-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 0.4138
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60 A30 V3.6 mOhmsN - Channel 1.2 V- 55 C+ 150 C43 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel10 V24.1 nCEnhancement Trenchfet, Powerpak
IRFBF20LPBF


N-Channel 900 V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Through Hole I2PAK
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Vishay 297
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AUD 1.7731
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   N - Channel  - 55 C+ 150 C Through HoleTO - 262TubeSi      
STP19NM50N


STMicroelectronics MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power
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STMicroelectronics 297
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AUD 2.0687
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14 A500 V250 mOhmsN - Channel 3 V + 150 C110 WThrough HoleTO - 220 - 3TubeSi1 Channel25 V34 nC  Mdmesh
R6020ENX


ROHM Semiconductor MOSFET
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ROHM 297
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AUD 2.7418
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20 A600 V170 mOhmsN - Channel 2 V- 55 C+ 150 C68 WThrough HoleTO - 220 - FP - 3BulkSi1 Channel20 V60 nCEnhancement  
FDH5500_F085


MOSFET Trans MOS N-Ch 55V 75A
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ON Semiconductor 297
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AUD 3.694
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75 A55 V7 mOhmsN - Channel  - 55 C+ 175 C375 WThrough HoleTO - 247TubeSi1 Channel20 V Enhancement Ultrafet
IXFH230N10T


MOSFET 230Amps 100V
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IXYS 297
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AUD 12.1194
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230 A100 V4.7 mOhmsN - Channel     Through HoleTO - 247 - 3TubeSi     Hiperfet
IPAN70R600P7SAUMA1


MOSFET
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Infineon 297
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AUD 0.619
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8.5 A700 V600 mOhmsN - Channel 3.5 V- 40 C+ 150 C24.9 WThrough HoleTO - 220FP - 3TubeSi1 Channel- 16 V , + 16 V10.5 nCEnhancement  
DMG6402LVT-7


MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A
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Diodes Incorporated 296
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AUD 0.163
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6 A30 V30 mOhmsN - Channel 1.5 V- 55 C+ 150 C1.75 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel20 V11.4 nCEnhancement  
AO4498


Transistor: N-MOSFET; unipolar; 30V; 14A; 2W; SO8
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Alpha & Omega 296
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AUD 0.6248
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ASD65R350E


700V 11A 350m 83W 3.5V TO-252 MOSFETs ROHS
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ANHI 296
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AUD 0.6867
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