MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMC7208S


MOSFET 30V Dual N-Channel PowerTrench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 5820
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AUD 0.8856
Multiples of: 3000

12 A , 16 A30 V9 mOhms , 6.4 mOhmsn - channel  - 55 C+ 150 C1.9 Wsmd/smtPOWER - 33Reelsi2 channel  enhancement powertrench syncfet
CI30N120SM4


1.2kV 80mΩ N Channel TO-247-4 MOSFETs ROHS
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Tokmas 298
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AUD 2.4985
Multiples of: 1

                   
IXTP260N055T2


MOSFET TRENCHT2 PWR MOSFET 55V 260A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 298
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AUD 8.6299
Multiples of: 1

260 A55 V3.3 mOhmsN - Channel 4 V- 55 C+ 175 C480 WThrough HoleTO - 220 - 3TubeSi 20 V140 nCEnhancement Hiperfet
WMJ80N65F2


Transistor: N-MOSFET; unipolar
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Wayon 298
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AUD 9.4657
Multiples of: 1

                   
STS5DNF20V


Transistor: N-MOSFET x2; STripFET™ F7; unipolar; 20V; 5A; 1.6W; SO8
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STMicroelectronics 297
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AUD 0.4513
Multiples of: 1

            Stripfet F7      
16N65F


650V 16A 580m 1PCSNChannel TO-220F MOSFETs ROHS
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GOODWORK 297
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AUD 0.6361
Multiples of: 1

                   
NCE01P30


TO-220 MOSFETs ROHS
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NCE Power 297
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AUD 0.9283
Multiples of: 1

                   
OSH25N60


600V 25A 190m 285W TO-3PNB MOSFETs ROHS
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OSEN 297
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AUD 0.972
Multiples of: 1

                   
AUR020N085


85V 247A 275W 1.8m 3.5V 1 N-Channel TOLL MOSFETs ROHS
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ANHI 297
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AUD 1.569
Multiples of: 1

                   
IXFX120N65X2


MOSFET MOSFET 650V/120A Ultra Junction X2
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IXYS 286
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AUD 28.9448
Multiples of: 1

120 A650 V24 mOhmsn - channel 2.7 V- 55 C+ 150 C1.25 kWthrough holeTO - 247 - 3Tubesi1 channel30 V225 nCenhancement hiperfet
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