MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N60G-TM3-T


TO-251 MOSFETs ROHS
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Unisonic 295
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AUD 0.2178
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WSD45P04DN56


40V 45A 18mΩ@4.5V,-45mA 20V P Channel DFN-8(5x6) MOSFETs ROHS
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Winsok 295
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AUD 0.4981
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IPN70R1K4P7S


MOSFET CONSUMER
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Infineon 295
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AUD 0.7427
Multiples of: 1

                   
BUK7S1R5-40HJ


MOSFET N-CHANNEL TRENCH STD LEVEL
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Nexperia 295
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AUD 1.6401
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260 A43 V3.27 mOhmsN - Channel 4.3 V- 55 C+ 175 C242 WSMD/SMTLFPAK - 88 - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V67 nCEnhancementAEC - Q100 
IMW40R025M2HXKSA1


MOSFETs SIC-MOS
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Infineon 295
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AUD 7.9955
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65 A400 V32.1 mOhmsN - Channel 4.5 V- 55 C+ 175 C195 WThrough HoleTO - 247 - 3TubeSiC1 Channel- 7 V , 23 V36 nCEnhancement CoolSiC
PMF250XNEX


MOSFET PMF250XNE/SC-70/REEL 7" Q1/T1
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Nexperia 294
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AUD 0.1672
Multiples of: 1

1 A30 V254 mOhmsN - Channel 750 mV- 55 C+ 150 C342 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel4.5 V1.05 nCEnhancement  
AUIRFS8407-7TRL


International Rectifier MOSFET 40V SGL N-CH HEXFET 1.3mOhms
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Infineon 266
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AUD 3.1851
Multiples of: 1

240 A40 V1 mOhmsN - Channel    230 WSmd/SmtD2PAK - 7ReelSi1 Channel 150 nC Aec - Q101 
SQ3495EV-T1_GE3


MOSFET Automotive P-Channel 30 V D-S 175C MOSFET TSOP-6 21 mO @ 4.5V
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Vishay 181
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AUD 0.9901
Multiples of: 1

8 A30 V21 mOhmsP - Channel 600 mV- 55 C+ 175 C5 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 12 V , + 12 V29 nCEnhancement  
SIR626LDP-T1-RE3


MOSFET 60V Vds; 20V Vgs PowerPAK SO-8
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Vishay 126
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AUD 1.8278
Multiples of: 1

186 A60 V1.5 mOhmsN - Channel 1 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK SO - 8Cut TapeSi1 Channel20 V135 nCEnhancement Trenchfet, Powerpak
CSD18504KCS


MOSFET 40V N-Ch NexFET Pwr MOSFET
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Texas Instruments 1
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AUD 1.2432
Multiples of: 1

100 A40 V8 mOhmsN - Channel 1.9 V- 55 C+ 150 C93 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V19 nC  Nexfet
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