MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF2804LPBF


International Rectifier MOSFET MOSFT 40V 280A 2.3mOhm 160nC
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Infineon 292
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AUD 2.4791
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280 A40 V2.3 mOhmsN - Channel20 V   330 WThrough HoleI2PAK - 3TubeSi1 Channel20 V160 nC   
CI60N120SM


1200V 60A 40mΩ@40V,20A 330W 2.6V@10mA 10pF@1000V N Channel 1.893nF@1000V 115nC@800V -55℃~+150℃@(Tj) TO-247-3 MOSFETs ROHS
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Tokmas 292
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AUD 4.614
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IRFB3806PBF


Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
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Infineon 291
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AUD 0.6958
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43 A60 V12.6 mOhmsN - Channel    71 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V22 nC   
FQA90N15


MOSFET 150V N-Channel QFET
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ON Semiconductor 291
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AUD 5.8769
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90 A150 V18 mOhmsn - channel  - 55 C+ 175 C375 Wthrough holeTO - 3PNTubesi1 channel25 V enhancement qfet
IXFX44N80P


800V 44A 1.04kW 190mO@10V,22A N Channel TO-247AC-3 MOSFETs ROHS
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IXYS 291
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AUD 22.5795
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44 A800 V190 mOhmsN - Channel 5 V- 55 C+ 150 C1.04 kWThrough HoleTO - 247 - 3TubeSi1 Channel30 V198 nCEnhancement Hiperfet
2SK3018(MS)


SOT-23 MOSFETs ROHS
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MSKSEMI 291
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AUD 0.0137
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TM3400CI


SOT-23 MOSFETs ROHS
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Tritech-MOS 291
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AUD 0.0155
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IPA60R190E6


N-Channel 600 V 20.2A (Tc) 34W (Tc) Through Hole PG-TO220-3-111
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Infineon 289
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AUD 2.1343
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20.2 A600 V190 mOhmsN - Channel  - 55 C+ 150 C151 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V63 nC  Coolmos
HX2302


MOSFET N Trench 20V 3A 1.2V @ 250uA 45 mΩ @ 3A,4.5V SOT23-3 RoHS
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hengjiaxing 242
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AUD 0.0121
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IPW60R099P7


Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-3
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Infineon 211
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AUD 3.8302
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            Coolmos P7      
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