MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP034N03L G


MOSFET N-CH 30V 80A 3.4mOhms
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Infineon 299
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AUD 1.0083
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80 A30 V3.4 mOhmsN - Channel  - 55 C+ 175 C94 WThrough HoleTO - 220TubeSi1 Channel20 V Enhancement Optimos
TK42A12N1,S4X


Toshiba MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V
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Toshiba 299
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AUD 1.3381
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42 A120 V7.8 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C35 WThrough HoleTO - 220 - 3ReelSi1 Channel20 V52 nCEnhancement  
FDP3672


MOSFET 105V 41a 0.033 Ohms/VGS=10V
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ON Semiconductor 299
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AUD 1.5616
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
IPP60R165CPXKSA1


Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
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Infineon 299
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AUD 3.103
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            Coolmos Cp      
NVJD4158CT1G


270mW SC-88-6 MOSFETs ROHS
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ON Semiconductor 298
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AUD 0.2036
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250 mA , 880 mA20 V , 30 V215 mOhms , 1 OhmsN - Channel, P - Channel 610 mV , 1.2 V- 55 C+ 150 C270 mWSMD/SMTSC - 88 - 6Reel , Cut TapeSi2 Channel- 20 V , + 12 V900 pC , 2.2 nCEnhancement  
G110N06K


MOSFET N Channel 55V 110A(Tc) 2V @ 250uA 6.4mΩ @ 40A,10V TO-252 RoHS
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GOFORD 298
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AUD 0.7465
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PSMN7R0-60YS,115


MOSFET Single N-Channel 60V 356A 117W 9.3mOhms
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Nexperia 298
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AUD 0.816
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89 A60 V6.4 mOhmsN - Channel 2 V- 55 C+ 175 C117 WSmd/SmtSOT - 669ReelSi1 Channel10 V45 nCEnhancement  
IRLS3034TRL7PP


N-Channel 40 V 240A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead)
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Infineon 298
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AUD 2.1139
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380 A40 V1 mOhmsN - Channel  - 55 C+ 175 C380 WSmd/SmtD2PAKReelSi1 Channel20 V120 nCEnhancement  
P7F90VX3-5600


Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 95W
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Shindengen 202
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AUD 2.1104
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IXTA36P15P


MOSFET -36.0 Amps -150V 0.110 Rds
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IXYS 154
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AUD 7.0269
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36 A150 V110 mOhmsP - Channel 4.5 V- 55 C+ 150 C300 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V55 nCEnhancement Polarp
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