MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP1R6N100D2


MOSFET N-CH MOSFETS (D2) 1000V 1.6A
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IXYS 591
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AUD 3.3821
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1.6 A1 kV10 OhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel     
DIT050N06-DIO


Transistor: N-MOSFET; unipolar; 60V; 35A; Idm:90A; 85W; TO220AB
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Diotec 300
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AUD 0.6499
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STD30N10F7-VB


100V 40A 30m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 300
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AUD 0.9081
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RU3080L-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 300
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AUD 1.3609
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FQA13N80_F109


MOSFET TO-3P N-CH 600V
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ON Semiconductor 300
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AUD 5.0392
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12.6 A800 V750 mOhmsN - Channel  - 55 C+ 150 C300 WThrough HoleTO - 3PNTubeSi1 Channel30 V Enhancement Qfet
IXTT12N150


MOSFET 1500V High Voltage Power MOSFET
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IXYS 300
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AUD 19.7179
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12 A1.2 kV2 OhmsN - Channel 4.5 V- 55 C+ 150 C890 WSMD/SMTD3PAK - 3 (TO - 268 - 3)TubeSi1 Channel- 30 V , 30 V106 nCEnhancement  
IXTT40N50L2


MOSFET 40 Amps 500V
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IXYS 300
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AUD 23.0015
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40 A500 V170 mOhmsn - channel 4.5 V- 55 C+ 150 C540 Wsmd/smtTO - 268 - 3Tubesi 20 V320 nCenhancement linear l2
WML13N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 13A; 33W
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Wayon 291
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AUD 2.2358
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            Sj - Mosfet M3      
IPA60R360P7S


MOSFET N Channel 600V 9A(Tc) 4V @ 140uA 360mΩ @ 2.7A,10V TO-220FP-3 RoHS
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Infineon 230
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AUD 0.8781
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IXFH80N65X2


MOSFET MOSFET 650V/80A Ultra Junction X2
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IXYS 201
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AUD 13.2941
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80 A650 V40 mOhmsN - Channel 2.7 V- 55 C+ 150 C890 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V143 nCEnhancement HiPerFET
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