MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTR5105PT1G


ON Semiconductor MOSFET PFET SOT23 60V 211MA 5OHM
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ON Semiconductor 3259
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AUD 0.0617
Multiples of: 10

196 mA60 V6 OhmsP - Channel 1 V- 55 C+ 150 C403 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V1 nCEnhancement  
STL11N3LLH6


STMicroelectronics MOSFET N-Ch 30V 0.006 Ohm 11A STripFET VI Deep
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STMicroelectronics 2910
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AUD 0.5521
Multiples of: 3000

11 A30 V6 mOhmsN - Channel 1 V- 55 C+ 150 C50 WSmd/SmtPowerflat - 8ReelSi1 Channel+/- 20 V17 nC  Stripfet
IRFZ14PBF


N-Channel 60 V 10A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 1071
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AUD 0.701
Multiples of: 1

10 A60 V200 mOhmsN - Channel 2 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V11 nCEnhancement  
FQP55N10


MOSFET 100V N-Channel QFET
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ON Semiconductor 301
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AUD 1.7075
Multiples of: 1

55 A100 V26 mOhmsN - Channel  - 55 C+ 175 C155 WThrough HoleTO - 220 - 3TubeSi1 Channel25 V Enhancement Qfet
IPI60R190C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
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Infineon 301
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AUD 2.3787
Multiples of: 1

            coolmos c6      
ASDM3416EZA-R


20V 7A 16mΩ@4.5V,7A 1.3W 0.62V@250uA 78pF@10V N Channel 640pF@10V 8.1nC@4.5V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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Ascend 300
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AUD 0.0314
Multiples of: 10

                   
G1NP02LLE


20V 1PCSNChannel+1PCSPChannel SOT-23-6L MOSFETs ROHS
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GOFORD 300
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AUD 0.0484
Multiples of: 10

                   
2N7002-7-F-VB


60V 1PCSNChannel SOT-23 MOSFETs ROHS
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VBsemi Elec 300
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AUD 0.0709
Multiples of: 10

                   
FDP18N50


Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
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ON Semiconductor 295
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AUD 2.9656
Multiples of: 1

            Unifet      
IPB026N06N


Infineon Technologies MOSFET N-Ch 60V 100A D2PAK-2
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Infineon 294
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AUD 1.3383
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100 A60 V2.6 mOhmsN - Channel 2.8 V- 55 C+ 150 C136 WSmd/SmtTO - 263 - 3Reel-1 Channel+/- 20 V56 nCEnhancement Optimos
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