MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRL3713PBF-VB


30V 260A 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 307
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AUD 1.0639
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IRFP064NPBF-JSM


55V 110A 200W 8mΩ@10V,59A 4V@250uA null TO-247AC MOSFETs ROHS
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JSMSEMI 307
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AUD 1.376
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AUIRF1405ZSTRL


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms
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Infineon 307
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AUD 3.2179
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44 A55 V5.3 mOhmsN - Channel20 V - 55 C+ 175 C230 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V EnhancementAec - Q101 
IPW60R070C6


MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6
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Infineon 307
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AUD 7.2731
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53 A600 V63 mOhmsN - Channel 2.5 V- 55 C+ 150 C391 WThrough HoleTO - 247TubeSi1 Channel20 V170 nCEnhancement Coolmos
WMO40N04TS


Transistor: N-MOSFET; unipolar; TO252
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Wayon 306
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AUD 0.2633
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HY3008P


MOSFET N Trench 80V 100A (Tc) 4V @ 250uA 8.5 mΩ @ 50A,10V TO-220FB-3L RoHS
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HuaYi 306
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AUD 0.512
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FQPF630


MOSFET 200V N-Channel QFET
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ON Semiconductor 306
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AUD 1.0015
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6.3 A200 V400 mOhmsN - Channel  - 55 C+ 150 C38 WThrough HoleTO - 220FTubeSi1 Channel25 V Enhancement Qfet
IRF640NSTRRPBF


Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
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Infineon 273
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AUD 1.1476
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   N - Channel  - 55 C+ 175 C Smd/SmtD2PAKReel       
SUM110P08-11L(TOKMAS)


80V 110A 10m 1PCSPChannel TO-263-3 MOSFETs ROHS
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Tokmas 230
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AUD 1.8048
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RD3S100CNTL1


MOSFET Nch 190V 10A TO-252 (DPAK)
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ROHM 55
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AUD 1.7239
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10 A190 V182 mOhmsN - Channel 500 mV- 55 C+ 150 C85 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V52 nCEnhancement  
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