MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AGM12T12A


120V 60A 10m@10V,20A 33W 1.6V@250uA 1PCSNChannel PDFN(5x6) MOSFETs ROHS
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AGM-Semi 312
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AUD 0.8209
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IXTP170N075T2


MOSFET 170 Amps 75V
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IXYS 312
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AUD 3.7269
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170 A75 V5.4 mOhmsN - Channel 4 V- 55 C+ 175 C360 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V109 nCEnhancement Hiperfet
TP65H050G4BS


MOSFET 650V, 50mOhm
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Transphorm 312
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AUD 12.1164
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34 A650 V60 mOhmsP - Channel 4.8 V- 55 C+ 150 C119 WSMD/SMTTO - 263 - 3BulkSi1 Channel- 20 V , + 20 V16 nCEnhancement  
TK8A50D(STA4,Q,M)


Toshiba MOSFET N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm
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Toshiba 311
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AUD 1.7343
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8 A500 V850 mOhmsN - Channel 2 V + 150 C40 WThrough HoleSC - 67 - 3ReelSi1 Channel10 V16 nCEnhancement Dtmosiv
FDMA1032CZ


MOSFET 20V Complementary PowerTrench MOSFET
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ON Semiconductor 311
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AUD 1.0191
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3.7 A20 V37 mOhmsN - Channel  - 55 C+ 150 C1.4 WSmd/SmtMICRO - FET - 8ReelSi2 Channel12 V Enhancement Powertrench
IPA029N06NM5S


MOSFET TRENCH 40<-<100V
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Infineon 311
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AUD 1.516
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IPAN70R360P7SXKSA1


Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP
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Infineon 311
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AUD 1.609
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            Coolmos P7      
RS100N135T


100V 135A 4.2mΩ@10V,80A 225W null TO-220 MOSFETs ROHS
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REASUNOS 305
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AUD 0.6931
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CSD87381P


MOSFET Sync Buck NexFET Pwr Block II
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Texas Instruments 290
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AUD 0.6669
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15 A30 V7 mOhmsN - channel10 V1 v to 1.7 V- 55 C+ 150 C4 WSmd/smtPTAB - 5ReelSi2 Channel8 V8.9 nCEnhancement Nexfet
DMN52D0UV-7


MOSFETs MOSFET BVDSS: 41V-60V SOT563 T&R 3K
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Diodes Incorporated 20
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AUD 0.1494
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480 mA50 V2 OhmsN - Channel 490 mV- 55 C+ 150 C890 mWSMD/SMTSOT563 - 6Reel , Cut TapeSi2 Channel- 12 V , + 12 V1.5 nCEnhancement  
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