MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WML14N70C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 700V; 11A; 31W
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Wayon 315
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AUD 1.5672
Multiples of: 1

            Sj - Mosfet C2      
VN2406L-G


Transistor: N-MOSFET; unipolar; 240V; 1A; 1W; TO92
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Microchip 315
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AUD 1.8172
Multiples of: 1

190 mA240 V6 OhmsN - Channel 800 mV- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
WSF3410


TO-252-2 MOSFETs ROHS
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Winsok 314
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AUD 0.4667
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HYG012N03LR1B


TO-263-2L MOSFETs ROHS
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HuaYi 314
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AUD 0.6131
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IXFT16N120P


MOSFET 16 Amps 1200V 1 Rds
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IXYS 314
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AUD 27.2866
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16 A1.2 kV950 mOhmsn - channel 6.5 V- 55 C+ 150 C660 Wsmd/smtTO - 268 - 3Tubesi1 channel30 V120 nCenhancement hiperfet
WMS090NV6LG4


Transistor: N-MOSFET; unipolar; SOP8
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Wayon 313
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AUD 0.3051
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IRF7413TRPBF


MOSFET N Trench 30V 13A 3V @ 250uA 11 mΩ @ 7.3A,10V SOIC-8_150mil RoHS
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Infineon 313
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AUD 0.9782
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13 A30 V18 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V44 nC   
NVD5C684NLT4G


MOSFET T6 60V LL DPAK
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ON Semiconductor 298
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AUD 2.4101
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38 A60 V13.7 mOhmsN - Channel 1.2 V- 55 C+ 175 C27 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V9.6 nCEnhancementAec - Q101 
TSM950N10CW RPG


MOSFET 100v, 6,5A, 95mohm, N channel Power Mosfet
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Taiwan Semiconductor 270
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AUD 0.3513
Multiples of: 1

6.5 A100 V80 mOhmsN - Channel 1.2 V- 55 C+ 150 C9 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V9.3 nCEnhancement  
R6007ENX


MOSFET 10V Drive Nch MOSFET
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ROHM 2
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AUD 1.6692
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7 A600 V570 mOhmsN - Channel 2 V- 55 C+ 150 C46 WThrough HoleTO - 220FM - 3BulkSi1 Channel+/- 30 V20 nCEnhancement  
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