MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCEP12T12


120V 129A 4.8mO@10V,60A 185W N Channel TO-220 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NCE Power 310
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AUD 1.2523
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STB40NF10LT4


Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK
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STMicroelectronics 310
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AUD 1.4209
Multiples of: 1

            Supermesh      
IPB60R099C6ATMA1


Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
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Infineon 310
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AUD 5.2239
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            Coolmos C6      
IXFY36N20X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-252D
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IXYS 310
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AUD 5.6
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           Tube      Hiperfet
IXTP52P10P


MOSFET -52.0 Amps -100V 0.050 Rds
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IXYS 310
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AUD 6.8299
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52 A100 V50 mOhmsp - channel 4 V- 55 C+ 150 C300 Wthrough holeTO - 220 - 3Tubesi1 channel20 V60 nCenhancement polarp
NVMFS5C460NLWFHT1G


MOSFETs T6 40V NCH LL IN SO8FL
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ON Semiconductor 309
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AUD 0.6715
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78 A40 V4.5 mOhmsN - Channel 2 V- 55 C+ 175 C46 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel20 V23 nCEnhancement  
SUD45P03-15-E3-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 309
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AUD 0.6023
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IXFP5N100P


MOSFET 5 Amps 1000V
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IXYS 309
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AUD 5.1224
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5 A1 kV2.8 OhmsN - Channel  - 55 C+ 150 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V   Hiperfet
IXTQ76N25T


MOSFET 76 Amps 250V 39 Rds
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IXYS 309
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AUD 5.0305
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76 A300 V42 mOhmsN - Channel 5 V- 55 C+ 150 C460 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V92 nCEnhancement Trench
ASW65R041EFDA


700V 80A 500W 41m 4V TO-247-3L MOSFETs ROHS
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ANHI 309
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AUD 5.937
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