MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTX60N50L2


MOSFET 60 Amps 500V
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IXYS 309
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AUD 44.7881
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60 A500 V100 mOhmsn - channel     through holePLUS - 247 - 3Tubesi     linearl2
FDS6574A-NL-VB


30V 18A 3mΩ@10V,18A N Channel SO-8 MOSFETs ROHS
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VBsemi Elec 308
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AUD 0.3671
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IPP055N03LGXKSA1


Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
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Infineon 308
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AUD 0.7815
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            Optimos 3      
IPLU300N04S4-R8


Infineon Technologies MOSFET N-CHANNEL 3040V
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Infineon 308
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AUD 4.5313
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300 A40 V770 uOhmsN - Channel 2 V- 55 C+ 175 C429 WSmd/SmtH - PSOF - 8ReelSi1 Channel10 V221 nCEnhancementAec - Q101 
IPW95R130PFD7XKSA1


MOSFETs Y
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Infineon 308
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AUD 5.2045
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36.5 A950 V130 mOhmsN - Channel 2.5 V- 55 C+ 150 C227 WThrough HoleTO - 247 - 3Tube 1 Channel- 20 V , + 20 V141 nCEnhancement  
IXTH6N100D2


MOSFET 6Amps 1000V
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IXYS 308
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AUD 11.0328
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6 A1 kV2.2 Ohmsn - channel  - 55 C+ 150 C300 Wthrough holeTO - 247 - 3Tubesi 20 V95 nC   
CPC3720CTR


MOSFET N Ch Dep Mode FET 250V
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IXYS 307
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AUD 0.4346
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   N - Channel     Smd/SmtSOT - 89 - 3Cut TapeSi1 Channel    Clare
IRFR3411TRPBF-HXY


100V 30A 37m@10V,10A 42W 2.2V@250uA 1PCSNChannel TO-252-2L MOSFETs ROHS
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HXY MOS 307
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AUD 0.5267
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YFW12N65AS-R


650V 12A 600mΩ@10V,5.5A 32.1W 2V@250uA null TO-263 MOSFETs ROHS
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YFW Electronics 307
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AUD 0.5501
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SH8M13GZETB


MOSFET 4V Drive Nch+Pch Si MOSFET
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ROHM 307
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AUD 0.7588
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6 A , 7 A30 V22 mOhms , 21.5 mOhmsN - Channel, P - Channel 1 v , 2.5 V + 150 C2 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V5 nC , 18 nCEnhancement  
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