MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FCA47N60F


N-Channel 600 V 47A (Tc) 417W (Tc) Through Hole TO-3PN
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ON Semiconductor 304
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AUD 12.806
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47 A600 V73 mOhmsN - Channel  - 55 C+ 150 C417 WThrough HoleTO - 3PNTubeSi1 Channel30 V Enhancement Superfet Frfet
KIA3510AB


MOSFET N Trench 100V 75A 4V @ 250uA 11 mΩ @ 50A,10V TO-263-2 RoHS
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KIA 303
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AUD 0.6512
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CSD86330Q3D


Mosfet Array 2 N-Channel (Half Bridge) 25V 20A 6W Surface Mount 8-LSON (3.3x3.3)
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Texas Instruments 303
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AUD 1.1267
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4.5 A25 V N - channel 900 mV- 55 C+ 150 C6 WSmd/smtSON - 8ReelSi2 Channel5 V4.8 nC , 9.2 nCEnhancement Nexfet
IRLZ44PBF


MOSFET N-Chan 60V 50 Amp
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Vishay 303
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AUD 1.6925
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50 A60 V28 mOhmsN - Channel 1 V- 55 C+ 175 C150 WThrough HoleTO - 220AB - 3TubeSi1 Channel5 V66 nCEnhancement  
FCP170N60


Fairchild Semiconductor MOSFET
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ON Semiconductor 303
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AUD 5.0403
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22 A600 V170 mOhmsN - Channel 3.5 V- 55 C+ 150 C227 WThrough HoleTO - 220 - 3TubeSi1 Channel20 v , 30 V42 nC  Superfet Ii
IXTH2N170D2


MOSFET N-channel MOSFET
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IXYS 303
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AUD 30.6194
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2 A1.7 kV6.5 Ohmsn - channel     through holeTO - 247 - 3Tubesi1 channel     
NTBG060N065SC1


MOSFET Silicon Carbide (SiC) MOSFET - 44 mohm, 650 V, M2, D2PAK-7L
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ON Semiconductor 302
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AUD 10.3433
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46 A650 V70 mOhmsN - Channel 4.3 V- 55 C+ 175 C170 WSMD/SMTD2PAK - 7LReel , Cut TapeSiC1 Channel- 8 V , + 22 V74 nCEnhancement  
STU4N52K3


Transistor: N-MOSFET; unipolar; 525V; 2A; 45W; IPAK
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STMicroelectronics 301
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AUD 0.5516
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            Supermesh      
IPB180P04P4L-02(TOKMAS)


40V 180A 1.8m@10V,50A 1PCSPChannel TO-263-7L MOSFETs ROHS
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Tokmas 291
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AUD 1.217
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NTH4L060N090SC1


MOSFET SIC MOSFET 900V TO247-4L 60MOHM
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ON Semiconductor 1
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AUD 9.1607
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46 A900 V84 mOhmsN - Channel 4.3 V- 55 C+ 175 C221 WThrough HoleTO - 247 - 4TubeSi1 Channel- 8 V , + 22 V87 nCEnhancement  
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