MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HY1515P


TO-220FB-3L MOSFETs ROHS
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HuaYi 305
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AUD 0.6105
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Hot IRFR420APBF


N-Channel 500 V 3.3A (Tc) 83W (Tc) Surface Mount D-Pak
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Vishay 305
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AUD 0.8797
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           TubeSi      
VBMB2102M


MOSFET P Channel 100V 12A 2.5V @ 250uA TO220F RoHS
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VBsemi Elec 305
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AUD 0.9238
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IRFP1405PBF


Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
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Infineon 305
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AUD 1.9493
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160 A55 V5.3 mOhmsN - Channel 4 V- 55 C+ 175 C310 WThrough HoleTO - 247ACTubeSi1 Channel20 V120 nC   
CSD19538Q2R


MOSFETs 100-V, N channel NexFET power MOSFET, single SON 2 mm x 2 mm, 59 mOhm
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Texas Instruments 304
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AUD 0.4871
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14.4 A100 V59 mOhmsN - Channel 3.8 V- 55 C+ 150 C20.2 WSMD/SMTWSON - 6Reel , Cut TapeSi1 Channel- 20 V , 20 V4.3 nCEnhancement  
PSMN3R2-40YLDX


MOSFET 40V N-CHANNEL LOGIC LEVEL
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Nexperia 304
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AUD 0.5369
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           Cut Tape       
BSZ058N03LS G


MOSFET OptiMOS 3 N-CH 30V 40A 5.8mOhms
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Infineon 304
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AUD 0.5768
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40 A30 V4.8 mOhmsN - Channel 1 V- 55 C+ 150 C45 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V30 nCEnhancement Optimos
BTA41-800BWRG


TO-3P MOSFETs ROHS
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JSMSEMI 304
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AUD 2.7058
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AUIRFP4004


International Rectifier MOSFET AUTO 40V 1 N-CH HEXFET 1.7mOhms
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Infineon 304
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AUD 5.2389
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350 A40 V1.7 mOhmsN - Channel    380 WThrough HoleTO - 247 - 3TubeSi1 Channel 220 nC Aec - Q101 
HY4008B


MOSFET N Trench 80V 200A 4V @ 250uA 3.5 mΩ @ 100A,10V TO-263-2 RoHS
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HuaYi 249
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AUD 1.2021
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