MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STS10P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 16975
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AUD 0.5815
Multiples of: 2500

12.5 A30 V12 mOhmsP - Channel 1 V- 55 C+ 150 C2.7 WSmd/SmtSO - 8ReelSi1 Channel- 10 V33 nCEnhancement Stripfet
ZXMN6A07FTA


SOT23 MOSFETs ROHS
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TECH PUBLIC 3448
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AUD 0.165
Multiples of: 5

                   
SP010N07AGTQ


100V 90A 8.7m@4.5V,25A 130W 1V@250uA TO-220-3L MOSFETs ROHS
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Siliup 531
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AUD 0.7103
Multiples of: 1

                   
PSMN057-200P,127


MOSFET TRENCH-200
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Nexperia 531
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AUD 5.0149
Multiples of: 1

39 A200 V57 mOhmsN - Channel  - 55 C+ 175 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement  
IRFR1205TRPBF-VB


60V 35A null TO-252 MOSFETs ROHS
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VBsemi Elec 530
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AUD 0.4219
Multiples of: 1

                   
SQD40031EL_GE3


MOSFET -30V Vds 20V Vgs DPAK (TO-252)
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Vishay 530
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AUD 2.1731
Multiples of: 1

100 A30 V3.2 mOhmsP - Channel 1. 5 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V186 nCEnhancement  
R6035ENZC17


MOSFET 600V 35A TO-3PF, Low-noise Power MOSFET
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ROHM 530
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AUD 7.8654
Multiples of: 1

35 A600 V102 mOhmsN - Channel 4 V- 55 C+ 150 C120 WThrough HoleTO - 3PF - 3TubeSi1 Channel- 20 V , 20 V110 nCEnhancement  
IXFK240N15T2


MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
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IXYS 529
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AUD 27.0239
Multiples of: 1

      - 55 C+ 175 C1250 WThrough HoleTO - 264TubeSi     Hiperfet
DMG3130LQ


SOT-23 MOSFETs ROHS
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Leiditech 528
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AUD 0.0993
Multiples of: 5

                   
CEM4435A


30V 9A 2.5W 20m@10V 1.4V@250uA SOP-8 MOSFETs ROHS
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TECH PUBLIC 523
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AUD 0.1344
Multiples of: 5

                   
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