MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HXY40P03D


30V 40A 20mΩ@10V,15A 2.5V@250uA P Channel TO-252-2L MOSFETs ROHS
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HXY MOS 538
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AUD 0.1791
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TPZVP2106GTA


SOT-223 MOSFETs ROHS
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TECH PUBLIC 533
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AUD 0.2337
Multiples of: 5

                   
IRF7311TRPBF-VB


20V 2 N-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 533
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AUD 0.4554
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IRFB4410Z


100V 110A 8m@10V,55A 230W 1 N-Channel TO-220 MOSFETs ROHS
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Minos 533
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AUD 0.5237
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IPD90P04P4L-04


Infineon Technologies MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2
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Infineon 533
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AUD 1.8214
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- 90 A- 40 V4.3 mOhmsP - Channel16 V- 2.2 V- 55 C+ 175 C125 WSmd/SmtDPAK - 3ReelSi1 Channel- 4.5 V176 nCEnhancementAec - Q101Optimos
STW24NM60N


Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247
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STMicroelectronics 533
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AUD 4.7448
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            mdmesh      
IXTP05N100


MOSFET 0.75 Amps 1000V 15 Rds
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IXYS 532
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AUD 2.709
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750 mA1 kV17 Ohmsn - channel 4.5 V- 55 C+ 150 C40 Wthrough holeTO - 220 - 3Tubesi1 channel30 V7.8 nCenhancement  
QS8K11TCR


MOSFET 4V Drive Nch+Nch Si MOSFET
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ROHM 531
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AUD 0.6649
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3.5 A30 V35 mOhms , 35 mOhmsN - Channel 1 V + 150 C1.5 WSmd/SmtT SMT - 8Cut TapeSi2 Channel20 V7 nC , 7 nCEnhancement  
CJS9004A


TSSOP-8 MOSFETs ROHS
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Changjing Electronics Technology 514
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AUD 0.1809
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WMK043N10HGS


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 384
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AUD 1.2997
Multiples of: 1

                   
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