MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDC6318P


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 3487
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AUD 0.1072
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FQPF7N60


Fairchild Semiconductor MOSFET 600V N-Channel QFET
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ON Semiconductor 965
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AUD 1.764
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4.3 A600 V1 OhmsN - Channel30 V - 55 C+ 150 C48 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Qfet
IRFB4321PBF


TO-220 MOSFETs ROHS
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JSMSEMI 539
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AUD 1.8269
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AUIRF1404ZSTRL


International Rectifier MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms
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Infineon 539
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AUD 3.0373
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180 A40 V2.7 mOhmsN - Channel20 V4 V- 55 C+ 175 C200 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V100 nCEnhancementAec - Q101 
SP60P30TH


TO-252-2L MOSFETs ROHS
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Siliup 538
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AUD 0.1632
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SP60N05GP8


SOP-8L MOSFETs ROHS
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Siliup 538
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AUD 0.1981
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HSM4113


MOSFET P Channel -40V 7.5A 2.5V @ 250uA 40mΩ @ 6A,10V SOP-8 RoHS
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HUASHUO 538
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AUD 0.1995
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IPD95R2K0P7ATMA1


Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; DPAK
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Infineon 538
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AUD 1.0318
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4 A950 V2 OhmsN - Channel 2.5 V- 55 C+ 150 C37 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V10 nCEnhancement CoolMOS
C3M0120065D


MOSFET SiC, MOSFET, 120mOhms, 650V, TO-247-3, Industrial, Gen 3
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Wolfspeed 537
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AUD 8.5537
Multiples of: 1

22 A650 V120 mOhmsN - Channel 3.6 V- 40 C+ 175 C98 WThrough HoleTO - 247 - 3TubeSiC1 Channel- 4 V , + 15 V28 nCEnhancement  
CSD25481F4


MOSFET P-CH Pwr MOSFET 20V 90mohm
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Texas Instruments 533
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AUD 0.1691
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- 2.5 A- 20 V105 mOhmsP - Channel- 12 V- 950 mV- 55 C+ 150 C500 mWSmd/SmtPICOSTAR - 3ReelSi1 Channel- 12 V0.913 nC  Nexfet
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