MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
P5504EDG


40V 50A 12mO@10V,17A 3W P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 537
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AUD 1.0141
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IRF730ASPBF


N-Channel 400 V 5.5A (Tc) 74W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 537
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AUD 1.6418
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   N - Channel  - 55 C+ 150 C Smd/SmtD2PAKTubeSi      
ZVNL110A


N-Channel 100 V 320mA (Ta) 700mW (Ta) Through Hole TO-92
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Diodes Incorporated 536
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AUD 0.5139
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320 mA100 V4.5 OhmsN - Channel  - 55 C+ 150 C700 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel20 V Enhancement  
SIHP14N50D-E3


MOSFET 500V 400mOhm@10V 14A N-Ch D-SRS
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Vishay 536
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AUD 2.1015
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14 A500 V400 mOhmsN - Channel 5 V- 55 C+ 150 C208 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V29 nCEnhancement  
NTB082N65S3F


MOSFET SUPERFET3 650V D2PAK PKG
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ON Semiconductor 536
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AUD 11.5983
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40 A650 V82 mOhmsN - Channel 3 V- 55 C+ 150 C313 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel30 V81 nCEnhancement  
TK380P60Y,RQ


MOSFET N-Ch DTMOSV 600V 80W 590pF 9.7A
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Toshiba 534
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AUD 1.9234
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9.7 A600 V290 mOhmsN - Channel 3 V-+ 150 C80 WSmd/SmtDPAK - 3Cut TapeSi1 Channel30 V20 nCEnhancement Dtmosv
IPW65R110CFD


MOSFET N-Channel MOSFET 650V 110mOhm
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Infineon 527
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AUD 3.2152
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31.2 A650 V99 mOhmsN - Channel 3.5 V- 55 C+ 150 C277.8 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V118 nCEnhancement Coolmos
SI8806DB-T2-E1


MOSFET 12V 3.9A 0.9W 4.3mOhms @ 4.5V
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Vishay 486
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AUD 0.2512
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   N - Channel  - 55 C+ 150 C Smd/SmtMICRO - FOOT - 1ReelSi     Microfoot Trenchfet
12N10


100V 15A 114mO@10V,3A 3W N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 483
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AUD 0.483
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FDMS86101DC


MOSFET 100V/20V Nch 2xCool PowerTrench MOSFET
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ON Semiconductor 72
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AUD 0.4725
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14.5 A100 V7.5 mOhmsN - Channel  - 55 C+ 150 C125 WSmd/SmtPOWER 56ReelSi2 Channel20 V44 nC  Powertrench
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