MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSP295H6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 8681
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AUD 0.4893
Multiples of: 1

            Sipmos      
HSU4004


MOSFET N Channel 40V 42A 2.5V @ 250uA 11.5mΩ @ 12A,10V TO-252 RoHS
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HUASHUO 528
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AUD 0.1858
Multiples of: 5

                   
DMP3036SFG-13


MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss
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Diodes Incorporated 528
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AUD 0.3694
Multiples of: 1

8.7 A30 V13 mOhmsP - Channel 2.5 V- 55 C+ 150 C2.3 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel25 V16.5 nCEnhancement Powerdi
ZXMC6A09DN8TC


SO-8 MOSFETs ROHS
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VBsemi Elec 528
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AUD 0.5493
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IXTH68P20T


MOSFET TrenchP Power MOSFET
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IXYS 528
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AUD 21.7045
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68 A200 V55 mOhmsP - Channel     Through HoleTO - 247 - 3TubeSi      
IPA082N10NF2SXKSA1


100V 46A 8.2mO@30A,10V 35W N Channel TO-220 MOSFETs ROHS
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Infineon 527
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AUD 1.4201
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46 A100 V8.2 mOhmsN - Channel 3.8 V- 55 C+ 175 C35 WThrough HoleTO - 220 - 3 - FPTubeSi1 Channel- 20 V , + 20 V42 nCEnhancement  
HY3312B


MOSFET N Trench 125V 130A (Tc) 4V @ 250uA 9 mΩ @ 65A,10V TO-263-2L RoHS
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HuaYi 519
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AUD 0.8378
Multiples of: 1

                   
R4P020N06HZGT100


MOSFETs R4P020N06HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for Switching
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ROHM 518
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AUD 0.3924
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2 A60 V200 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTSOT - 89 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V7 nCEnhancement  
FDS9933A


MOSFET SO-8 DUAL P-CH -20V
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ON Semiconductor 427
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AUD 0.7667
Multiples of: 1

3.8 A20 V75 mOhmsP - Channel  - 55 C+ 150 C2 WSmd/SmtSOIC - 8 NarrowReelSi2 Channel8 V Enhancement Powertrench
SUP85N15-21-E3


N-Channel 150 V 85A (Tc) 2.4W (Ta), 300W (Tc) Through Hole TO-220AB
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Vishay 5
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AUD 1.4282
Multiples of: 1

85 A150 V17.5 mOhmsN - Channel 2 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V110 nCEnhancement Trenchfet
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