MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCEP026N10


TO-220 MOSFETs ROHS
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NCE Power 519
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AUD 2.1421
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ZXMN6A07ZTA


SOT-89-3 MOSFETs ROHS
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TECH PUBLIC 518
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AUD 0.1723
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SE1216


New Quadratic Unclassified Data DFN2*2-6L RoHS
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SINO-IC 518
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AUD 0.2069
Multiples of: 5

                   
WGF7N80S


TO-220F MOSFETs ROHS
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Wild Goose 518
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AUD 0.437
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MPT042N10S


100V 120A 3.5m@10V,50A 227.2W 3V@250uA 1 N-Channel TO-263 MOSFETs ROHS
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Minos 518
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AUD 0.6629
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WMM11N65C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 650V; 9A; 63W; TO263
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Wayon 517
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AUD 0.6979
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            Sj - Mosfet C2      
IPB057N06N


Infineon Technologies MOSFET N-Ch 60V 45A D2PAK-2
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Infineon 517
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AUD 1.297
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45 A60 V4.9 mOhmsN - Channel+/- 20 V2.8 V- 55 C+ 175 C83 WSmd/SmtPG - TO 263 - 3Reel-1 Channel10 V27 nCEnhancement Optimos
IXTH110N10L2


MOSFET L2 Linear Power MOSFET
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IXYS 517
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AUD 23.3134
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110 A100 V18 mOhmsn - channel 2.5 V- 55 C+ 150 C600 Wthrough holeTO - 247 - 3Tubesi1 channel20 V260 nCenhancement  
NVHL025N65S3


MOSFET SUPERFET3 650V
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ON Semiconductor 517
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AUD 43.8462
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75 A650 V25 mOhmsN - Channel 2.5 V- 55 C+ 150 C595 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V236 nCEnhancementAec - Q101Superfet
PSMN018-80YS,115


MOSFET N-CHAN 80V 45A
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Nexperia 271
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AUD 0.5451
Multiples of: 1

45 A80 V15 mOhmsN - Channel  - 55 C+ 175 C89 WSmd/SmtLFPAKReelSi1 Channel20 V    
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