MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB45P03P4L11ATMA2


MOSFET MOSFET_20V 40V
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Infineon 523
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AUD 1.5416
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IPB017N06N3 G


MOSFET OptiMOS3 PWRTrnsistr N-CH
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Infineon 523
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AUD 3.3657
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180 A60 V1.3 mOhmsN - Channel 2 V- 55 C+ 175 C250 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V275 nCEnhancement Optimos
STW13N80K5


Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; TO247-3
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STMicroelectronics 523
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AUD 2.976
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            mdmesh      
IXFH74N20P


MOSFET 74 Amps 200V 0.034 Rds
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IXYS 523
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AUD 7.9627
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74 A200 V34 mOhmsN - Channel 5 V- 55 C+ 175 C480 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V107 nCEnhancement Polarht, Hiperfet
BRFL13N50


500V 13A N Channel TO-220FL MOSFETs ROHS
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Blue Rocket 522
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AUD 0.4663
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STB10N95K5


STMicroelectronics MOSFET
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STMicroelectronics 521
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AUD 3.2462
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8 A950 V800 mOhmsn - channel+/- 30 V4 V- 55 C+ 150 C130 Wsmd/smtD2PAK - 3Cut Tapesi1 channel30 V22 nCenhancement supermesh
VBE2625


MOSFET P Trench 60V 50A 3V @ 250uA 40 mΩ @ 14A,4.5V TO-252 RoHS
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VBsemi Elec 488
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AUD 0.8426
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CSD19532Q5B


N-Channel 100 V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)
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Texas Instruments 455
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AUD 2.0447
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124 A100 V4.9 mOhmsN - Channel20 V2.6 V- 55 C+ 150 C3.1 WSmd/SmtVSON - 8 CLIPReelSi1 Channel10 V48 nCEnhancement Nexfet
WSF40P04


MOSFET P Trench 40V 20A (Tc) 3V @ 250uA 42 mΩ @ 12A,10V TO-252 RoHS
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Winsok 227
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AUD 0.3421
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STW42N65M5


Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; TO247
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STMicroelectronics 0
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AUD 6.15
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33 A650 V70 mOhmsN - Channel 3 V- 55 C+ 150 C190 WThrough HoleTO - 247 - 3TubeSi1 Channel- 25 V , 25 V98 nCEnhancement MDmesh
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