MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LND250K1-G


Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R
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Microchip 26566
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AUD 0.763
Multiples of: 1

13 mA500 V1 kOhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Depletion  
FDD3510H


Fairchild Semiconductor MOSFET 80V Dual N & P-Chan PowerTrench
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ON Semiconductor 26374
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AUD 1.0383
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4.3 A80 V80 mOhmsn - channel, p - channel20 V - 55 C+ 150 C3.1 Wsmd/smtDPAK - 3Reelsi2 channel20 V enhancement powertrench
2N7002KW


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper 26325
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AUD 0.0204
Multiples of: 20

                   
IPG20N10S4L35ATMA1


Infineon Technologies MOSFET MOSFET
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Infineon 26318
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AUD 0.8765
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20 A , 20 A100 v , 100 V29 mOhms , 29 mOhmsN - Channel+/- 16 V1.6 V- 55 C+ 175 C43 WSmd/SmtPG - TDSON - 8 - 4Reel-2 Channel16 V13.4 nCEnhancementAec - Q101 
FDG330P


Transistor: P-MOSFET; unipolar; -12V; -2A; 0.75W; SC70-6
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ON Semiconductor 26314
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AUD 0.6704
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            powertrench®      
IRLML2803TR(UMW)


SOT-23 MOSFETs ROHS
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Youtai 26248
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AUD 0.0498
Multiples of: 10

                   
IRLML0040TRPBF


Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
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Infineon 26194
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AUD 0.1205
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3.6 A40 V78 mOhmsN - Channel 1 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
BSD316SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
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Infineon 26190
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AUD 0.02
Multiples of: 3000

            Optimos 2      
BSS314PEH6327XT


MOSFET OptiMOS -P 3 Small Signal Transistor
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Infineon 26190
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AUD 0.1113
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1.5 A30 V107 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel20 V- 2.9 nCEnhancementAec - Q101 
SI2336DS-T1-GE3


MOSFET 30V Vds 8V Vgs SOT-23
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Vishay 26190
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AUD 0.2365
Multiples of: 3000

5.2 A30 V42 mOhmsN - Channel 400 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V10 nCEnhancement Trenchfet
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