MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CRSS037N10N


100V 120A 227W 3.7mO@10V,50A N Channel TO-263-3 MOSFETs ROHS
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CRMICRO 26297
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AUD 0.8451
Multiples of: 1

                   
FDMC86102LZ


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 26190
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AUD 1.4291
Multiples of: 3000

7 A100 V24 mOhmsN - Channel 1.6 V- 55 C+ 150 C41 WSmd/SmtMLP - 8ReelSi1 Channel20 V15.3 nC  Powertrench
FDD3510H


Fairchild Semiconductor MOSFET 80V Dual N & P-Chan PowerTrench
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ON Semiconductor 26180
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AUD 0.9868
Multiples of: 1

4.3 A80 V80 mOhmsn - channel, p - channel20 V - 55 C+ 150 C3.1 Wsmd/smtDPAK - 3Reelsi2 channel20 V enhancement powertrench
NTMFS10N3D2C


MOSFET 100V20V N-Channel PTNG MOSFET
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ON Semiconductor 26172
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AUD 6.7357
Multiples of: 1

151 A100 V2.4 mOhmsN - Channel 2 V- 55 C+ 150 C138 WSmd/SmtPOWER - 56 - 8Cut TapeSi1 Channel20 V84 nCEnhancement  
AO4407A


MOSFET P Trench 30V 12A 3V @ 250uA 11 mΩ @ 12A,20V SOIC-8_150mil RoHS
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Alpha & Omega 26025
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AUD 0.2675
Multiples of: 5

           -       
2SK3018WT


30V 100mA 8Ω@4V,10mA 150mW 1.5V@100uA N Channel SOT-523-3 MOSFETs ROHS
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Hong Kong Chuangji 25996
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AUD 0.0174
Multiples of: 50

                   
RTF016N05TL


N-Channel 45 V 1.6A (Ta) 320mW (Ta) Surface Mount TUMT3
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ROHM 25975
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AUD 0.2231
Multiples of: 1

1.6 A45 V190 mOhmsN - Channel 500 mV- 55 C+ 150 C0.8 WSmd/SmtTUMT - 3ReelSi1 Channel4.5 V2.3 nCEnhancement  
FS3400


30V 5.8A 28mΩ@10V,2.9A 1.4W 900mV@250uA 30pF@15V N Channel 620pF@15V 9.5nC@4.5V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FUXINSEMI 25879
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AUD 0.0326
Multiples of: 20

                   
IRF2807ZSTRLPBF


International Rectifier MOSFET MOSFT 75V 89A 9.4mOhm 71nC
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Infineon 25734
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AUD 1.8545
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89 A75 V9.4 mOhmsN - Channel 4 V + 175 C170 WSmd/SmtD - PAK - 3ReelSi1 Channel 110 nC   
RRQ030P03TR


P-Channel 30 V 3A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95)
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ROHM 2910
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AUD 2.6743
Multiples of: 50

3 A- 30 V55 mOhmsP - Channel20 V - 55 C+ 150 C1.25 WSmd/SmtT SMT - 6ReelSi1 Channel20 V12 nCEnhancement  
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First...96979899100...

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