MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ900N20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 26508
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AUD 1.0355
Multiples of: 1

            Optimos 3      
2N7002K-7-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 26325
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AUD 0.0104
Multiples of: 20

                   
IRF7205TRPBF


MOSFET P Trench 30V 4.6A 3V @ 250uA 70 mΩ @ 4.6A,10V SOIC-8_150mil RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 26324
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AUD 0.3441
Multiples of: 1

4.6 A30 V130 mOhmsP - Channel 3 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V27 nC   
FDG330P


Transistor: P-MOSFET; unipolar; -12V; -2A; 0.75W; SC70-6
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ON Semiconductor 26314
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AUD 0.5991
Multiples of: 1

            powertrench®      
BSS314PEH6327XT


MOSFET OptiMOS -P 3 Small Signal Transistor
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Infineon 26190
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AUD 0.1113
Multiples of: 1

1.5 A30 V107 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel20 V- 2.9 nCEnhancementAec - Q101 
SI7619DN-T1-GE3


Vishay Semiconductors MOSFET -30V -24A 27.8W
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Vishay 26190
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AUD 0.2188
Multiples of: 3000

24 A30 V21 mOhmsP - Channel 1 V- 55 C+ 150 C27.8 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel- 10 V32 nCEnhancement Trenchfet
LP2301BLT1G


MOSFET P Trench 20V 2.8A 900mV @ 250uA 100 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Leshan 26131
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AUD 0.0328
Multiples of: 20

                   
SI2333


MOSFET P Trench 12V 7.1A (Tc) 1V @ 250uA 35 mΩ @ 5.1A,4.5V SOT-23 RoHS
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Bourne 26102
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AUD 0.0536
Multiples of: 10

                   
BSZ100N06NSATMA1


Infineon Technologies MOSFET
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Infineon 3988
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AUD 0.627
Multiples of: 1

           Reel      Optimos
STL3N65M2


MOSFET N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package
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STMicroelectronics 0
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AUD 0.5823
Multiples of: 3000

2.3 A650 V1.6 OhmsN - Channel 2 V- 55 C+ 150 C22 WSmd/SmtPowerflat - 3.3X3.3 - HV - 8Cut TapeSi1 Channel25 V5 nCEnhancement Mdmesh
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First...96979899100...

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