MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7898DP-T1-E3


MOSFET 150V Vds 20V Vgs PowerPAK SO-8
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Vishay 27145
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AUD 1.3043
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel      Trenchfet/Powerpak
DMPH6250SQ-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 27086
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AUD 0.2392
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2.4 A60 V155 mOhmsP - Channel 3 V- 55 C+ 175 C1.62 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V8.3 nCEnhancementAec - Q101 
SSM6J808R,LF


MOSFETs
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Toshiba 27055
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AUD 0.3268
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           Reel , Cut TapeSi    AEC - Q101 
UT8205AG-AG6


20V 6A 19.5mΩ@4.5V,3A 1.5W 700mV@250uA 58pF@10V 2 N-Channel 466pF@10V 5.7nC@10V -55℃~+150℃@(Tj) SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 26967
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AUD 0.069
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2N7002KT1G


MOSFET NFET SOT23 60V 380mA 2.5Ohms
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ON Semiconductor 26966
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AUD 0.0274
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380 mA60 V1.6 OhmsN - Channel 1 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.7 nCEnhancement  
Hot IRFR5305TRPBF


MOSFET P Trench 55V 31A 4V @ 250uA 65 mΩ @ 16A,10V TO-252-2 (DPAK) RoHS
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Infineon 26864
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AUD 0.3165
Multiples of: 5

31 A55 V65 mOhmsP - Channel 4 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V42 nCEnhancement  
IRLML6346TR(UMW)


SOT-23 MOSFETs ROHS
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Youtai 26830
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AUD 0.0459
Multiples of: 10

                   
FDC5614P


SOT23-6 MOSFETs ROHS
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TECH PUBLIC 26825
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AUD 0.1933
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BSC050N10NS5ATMA1


100V 5mO@50A,10V N Channel TDSON-8-7 MOSFETs ROHS
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Infineon 26818
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AUD 2.0079
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           Cut Tape       
TPNTK3139PT1G


20V 850mA 530mO@4.5V,550mA 690mW P Channel SOT-723 MOSFETs ROHS
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TECH PUBLIC 26802
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AUD 0.0307
Multiples of: 20

                   
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First...96979899100...

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