MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002P.215


MOSFET N Trench 60V 360mA 2.4V @ 250uA 1.6 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Nexperia 77381
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AUD 0.122
Multiples of: 1

                   
PMV50XPR


P-Channel 20 V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB
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Nexperia 26786
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AUD 0.1635
Multiples of: 5

- 4.4 A- 20 V48 mOhmsP - Channel12 V- 900 mV- 55 C+ 150 C1.096 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V7.7 nCEnhancement  
JSM80N03D


TO-252 MOSFETs ROHS
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JSMSEMI 26694
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AUD 0.1246
Multiples of: 5

                   
IPD60R3K3C6ATMA1


Infineon Technologies MOSFET N-Ch 650V 1.7A DPAK-2
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Infineon 26675
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AUD 0.4202
Multiples of: 2500

1.7 A600 V3.3 OhmsN - Channel 3 V- 55 C+ 150 C18.1 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V4.6 nC   
IPB017N10N5ATMA1


Infineon Technologies MOSFET N-Ch 100V 180A D2PAK-2
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Infineon 26624
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AUD 3.63
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180 A100 V2.2 mOhmsN - Channel+/- 20 V2.2 V- 55 C+ 175 C375 WSmd/SmtD2PAK - 7ReelSi1 Channel10 V168 nCEnhancement Optimos
SQ4401EY-T1_BE3


MOSFET P-CHANNEL 40V
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Vishay 26610
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AUD 2.4038
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HX2301A


MOSFET P Trench 20V 2.5A 1V @ 250uA 130 mΩ @ 2.5A,4.5V SOT-23 RoHS
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hengjiaxing 26335
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AUD 0.0118
Multiples of: 50

                   
BSS84


50V 0.13A 8Ω@10V,0.15A 0.225W 2V@250uA 5pF@5V P Channel 30pF@5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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FUXINSEMI 26209
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AUD 0.0214
Multiples of: 20

                   
HSBB6115


MOSFET P Channel 60V 26A 2.5V @ 250uA 25mΩ @ 10A,10V PRPAK3x3 RoHS
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HUASHUO 25828
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AUD 0.3824
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DMP3036SSS-13


MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss
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Diodes Incorporated 0
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AUD 0.2964
Multiples of: 5

19.5 A30 V16 mOhmsP - Channel 1 V- 55 C+ 150 C1.9 WSmd/SmtSO - 8Cut TapeSi1 Channel25 V16.5 nCEnhancement  
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