MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3415


20V 4A 1.2W 50mΩ@4.5V,4.0A 800mV@250uA 160pF@10V P Channel 1450pF@10V 17.2nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 34580
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AUD 0.0369
Multiples of: 10

                   
SI1403BDL-T1-BE3


P-Channel 20V 1.4A (Ta) 568mW (Ta) Surface Mount SC-70-6
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Vishay 28658
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AUD 0.2436
Multiples of: 1

1.5 A20 V265 mOhmsP - Channel 1.3 V- 55 C+ 150 C2.8 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 12 V , + 12 V4.5 nCEnhancement  
PJS6421_S1_00001


MOSFET /S21/TRR/7"/HF/3K/SOT-23 6L-1/MOS/SOT/NFET-20TLMP/NF20TL-QI31/PJ///
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Panjit 28421
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AUD 0.1587
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7.4 A20 V26 mOhmsP - Channel 1 V- 55 C+ 150 C2 WSMD/SMTSOT - 23 - 6Reel , Cut TapeSi1 Channel- 10 V , 10 V16.5 nCEnhancement  
EM6K1T2R


MOSFET 2N-CH 30V .1A
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ROHM 28411
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AUD 0.2089
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100 mA30 V7 OhmsN - Channel    150 mWSmd/SmtEMT - 6ReelSi2 Channel20 V Enhancement  
AP40P04G


40V 40A 7mΩ@20V,40A P Channel PDFN-8L(5x6) MOSFETs ROHS
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Quan Li 27082
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AUD 0.3266
Multiples of: 5

                   
BSC070N10NS3G


MOSFET N Channel 100V 90A(Tc) 3.5V @ 75uA 7mO @ 50A,10V PG-TDSON-8 RoHS
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Infineon 20716
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AUD 0.6121
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NCE6050KA


MOSFET N Trench 60V 50A 2.5V @ 250uA 20 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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NCE Power 7599
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AUD 0.2194
Multiples of: 5

                   
IRF5803TRPBF


MOSFET P Trench 40V 3.4A 3V @ 250uA 112 mΩ @ 3.4A,10V TSOP-6 RoHS
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Infineon 5805
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AUD 0.213
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            Hexfet®      
IRLR2908TRPBF


Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
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Infineon 3355
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AUD 0.8027
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39 A80 V30 mOhmsN - Channel    120 WSmd/SmtDPAKReelSi1 Channel16 V22 nC   
DMN2990UDJ-7


MOSFET MOSFET BVDSS: 8V-24V SOT963,10K
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Diodes Incorporated 742
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AUD 0.1599
Multiples of: 5

450 mA20 V990 mOhmsN - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6Cut TapeSi2 Channel8 V500 pCEnhancement  
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