MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSM002P03T2L


P-Channel 30 V 200mA (Ta) 150mW (Ta) Surface Mount VMT3
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ROHM 69840
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AUD 0.1269
Multiples of: 8000

   P - Channel     Smd/SmtVMT - 3Reel       
HSBB4115


40V 39A 10.5mΩ@10V,18A 52.1W 1.6V@250uA 222pF@15V P Channel 3.5nF@15V 27.9nC@4.5V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO 10679
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AUD 0.3268
Multiples of: 5

                   
AGML315ME


30V 1.28W 900mV@250uA 1PCSNChannel+1PCSPChannel SOT-23-6L MOSFETs ROHS
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AGM-Semi 2502
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AUD 0.0683
Multiples of: 10

                   
MMFTP4042K-AQ


MOSFETs
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Diotec 2502
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AUD 0.1421
Multiples of: 1

                   
DMTH6005LPSQ-13


MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A
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Diodes Incorporated 2501
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AUD 1.123
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100 A60 V10 mOhmsN - Channel 1 V- 55 C+ 175 C150 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel+/- 20 V47.1 nCEnhancementAec - Q101 
PJQ5592-AU_R2_002A1


MOSFETs 150V N-Channel Enhancement Mode MOSFET
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Panjit 2501
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AUD 1.586
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42 A150 V21 mOhmsN - Channel 4 V- 55 C+ 175 C94 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V36 nCEnhancementAEC - Q101 
IPB081N06L3GATMA1


MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
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Infineon 2500
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AUD 0.9243
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50 A60 V6.7 mOhmsN - Channel 1.2 V- 55 C+ 175 C79 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 20 V29 nCEnhancement Optimos
IRFU9024NPBF


MOSFET P Trench 55V 11A 4V @ 250uA 175 mΩ @ 6.6A,10V TO-251 (I-PAK) RoHS
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Infineon 2498
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AUD 0.3355
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STN4NF03L


Transistor: N-MOSFET; unipolar; 30V; 4.5A; 3.3W; SOT223
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STMicroelectronics 2454
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AUD 0.4062
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            Supermesh      
IRF9510STRLPBF


P-Channel 100 V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 2307
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AUD 1.0819
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   P - Channel  - 55 C+ 175 C Smd/SmtD2PAKReelSi      
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