MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IMZ120R060M1H


MOSFET SIC DISCRETE
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Infineon 2520
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AUD 5.6289
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IRFS4321TRLPBF


Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
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Infineon 2519
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AUD 2.1836
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85 A150 V12 mOhmsN - Channel 5 V- 55 C+ 175 C350 WSmd/SmtD2PAK - 3ReelSi1 Channel30 V110 nC   
BSC046N02KS G


MOSFET OptiMOS2 PWR TRANS 20V 80A
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Infineon 2518
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AUD 0.9736
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19 A20 V4.6 mOhmsN - Channel  - 55 C+ 150 C2.8 WSmd/SmtTDSONReelSi1 Channel12 V Enhancement Optimos
LN2292LT1G


100V 3A 200mΩ null SOT-23E MOSFETs ROHS
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Leshan 2517
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AUD 0.0909
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NTMYS003N08LHTWG


MOSFETs Power MOSFET 80 V, 132 A, 3.3mohm Single N-Channel
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ON Semiconductor 2517
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AUD 2.2164
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132 A80 V4.3 mOhmsN - Channel 2 V- 55 C+ 175 C137 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V64 nCEnhancement  
DMP2004DMK-7


Diodes Incorporated MOSFET 500mW -20Vdss
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Diodes Incorporated 2516
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AUD 0.3448
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550 mA- 20 V900 mOhmsP - Channel  - 55 C+ 150 C500 mWSmd/SmtSOT - 26 - 6ReelSi2 Channel8 V Enhancement  
ZVP4424ASTZ


Diodes Incorporated MOSFET P-Chnl 240V
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Diodes Incorporated 2514
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AUD 0.6994
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- 200 mA- 240 V9 OhmsP - Channel40 V- 2 V- 55 C+ 150 C750 mWThrough HoleTO - 92 - 3BulkSi1 Channel40 V Enhancement  
SI8812DB-T2-E1


Vishay Semiconductors MOSFET 20V 3.2A 0.9W 0.059ohms 4.5V
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Vishay 2513
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AUD 0.1987
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3.2 A20 V590 mOhmsN - Channel8 V1 V- 55 C+ 150 C900 mWSmd/SmtMICRO - FOOT - 4ReelSi  6.3 nC  Micro Foot
HSU4004


MOSFET N Channel 40V 42A 2.5V @ 250uA 11.5mΩ @ 12A,10V TO-252 RoHS
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HUASHUO 2085
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AUD 0.1332
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HXY70P03D


30V 70A 10mΩ@10V,20A 2.5V@250uA P Channel TO-252-2L MOSFETs ROHS
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HXY MOS 1222
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AUD 0.185
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