MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TW7404FJ


DFN5x6-8L MOSFETs ROHS
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TWGMC 2482
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AUD 0.6202
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IAUC41N06S5L100ATMA1


N-Channel 60V 41A (Tj) 42W (Tc) Surface Mount PG-TDSON-8-33
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Infineon 2481
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AUD 0.5648
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          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
NCE30P50G


MOSFET P Trench 30V 50A (Tc) 2.2V @ 250uA 7 mΩ @ 10A,10V DFN5x6-EP RoHS
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NCE Power 2481
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AUD 0.7219
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DMPH3010LK3-13


MOSFET MOSFET BVDSS: 25V 30V TO252 T&R 2.5K
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Diodes Incorporated 2480
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AUD 0.5993
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         Smd/SmtTO - 252 - 3Cut TapeSi      
SQJQ144AE-T1_JE3


MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 2480
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AUD 2.1015
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575 A40 V900 uOhmsN - Channel 3 V- 55 C+ 175 C600 WSMD/SMTPOWERPAK 8X8LReel , Cut TapeSi1 Channel- 20 V , + 20 V116 nC  TrenchFET
IPB010N06N


Infineon Technologies MOSFET N-Ch 60V 180A D2PAK-6
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Infineon 2480
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AUD 5.1552
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180 A60 V1 mOhmsN - Channel20 V2.1 V- 55 C+ 175 C300 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V208 nCEnhancement Optimos
DMN1250UFEL-7


MOSFET 8 N-Ch FET 4.5V 280mOhm 12Vdss
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Diodes Incorporated 2479
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AUD 0.5993
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   N - Channel     Smd/SmtU - QFN1515 - 12Cut TapeSi1 Channel     
R6009END3TL1


N-Channel 600 V 9A (Tc) 94W (Tc) Surface Mount TO-252
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ROHM 2479
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AUD 1.8984
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9 A600 V535 mOhmsN - Channel 2 V- 55 C+ 150 C94 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V23 nCEnhancement  
SI2305CDS


20V 5.5A 1.56W 25mΩ@4.5V,4A 1V@250uA P Channel SOT-23 MOSFETs ROHS
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MSKSEMI 2478
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AUD 0.1003
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IRF5802TRPBF-VB


100V 3.2A null TSOP-6 MOSFETs ROHS
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VBsemi Elec 2478
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AUD 0.1965
Multiples of: 5

                   
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