MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJL2322


20V 4A 1V 1PCSNChannel SOT-23-6L MOSFETs ROHS
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Changjing Electronics Technology 2531
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AUD 0.0874
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RQ3N025ATTB1


MOSFETs Pch -80V -2.5A, HSMT8, Power MOSFET
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ROHM 2531
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AUD 0.4728
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7 A80 V240 mOhmsP - Channel 4 V- 55 C+ 150 C14 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel20 V13 nCEnhancement  
RQ3L120BLFRATCB


MOSFETs HSMT N CHAN 60V
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ROHM 2531
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AUD 0.6813
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12 A60 V30 mOhmsN - Channel 4 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel20 V7.5 nCEnhancementAEC - Q101 
FDMS7608S


MOSFET PT7 Nch 30/20V & PT8 Nch 30/20V
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ON Semiconductor 2531
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AUD 0.8442
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12 A , 15 A30 V10.3 mOhms , 6.6 mOhmsN - Channel  - 55 C+ 150 C1 WSmd/SmtPOWER56ReelSi2 Channel20 V   Powertrench Syncfet
NTLUS020N03CTAG


MOSFET T6 30V NCH 1.6X1.6 UDFN
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ON Semiconductor 2530
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AUD 0.7575
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8.2 A30 V13 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.52 WSmd/SmtUDFN - 6Cut Tape 1 Channel20 V5 nCEnhancement  
PSMN8R5-40MSDX


MOSFET PSMN8R5-40MSDX
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Nexperia 2529
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AUD 0.3924
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60 A40 V8.5 mOhmsN - Channel 2.15 V- 55 C+ 175 C59 WSMD/SMTLFPAK - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V19 nCEnhancement  
DMP21D1UT-7


MOSFETs MOSFET BVDSS: 8V~24V SOT523 T and R 3K
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Diodes Incorporated 2528
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AUD 0.0607
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           Reel , Cut TapeSi      
HYG067N07NQ1D


68V 70A 6.8mΩ@10V,30A 93W 3.2V@250uA 139pF@25V N Channel 7.089nF@25V 110nC@10V -55℃~+175℃@(Tj) TO-252-2L MOSFETs ROHS
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HuaYi 2526
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AUD 0.3454
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AOD4185-JSM


TO-252 MOSFETs ROHS
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JSMSEMI 2512
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AUD 0.3123
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AOD409


TO-252 MOSFETs ROHS
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SLKORMICRO 2488
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AUD 0.293
Multiples of: 5

                   
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