MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSL10P06


60V 10A 70mΩ@10V,5A 1.5W P Channel SOT-223 MOSFETs ROHS
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HUASHUO 2492
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AUD 0.1803
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Hot BSC042NE7NS3GATMA1


Transistor: N-MOSFET; unipolar; 75V; 100A; 125W; PG-TDSON-8
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Infineon 2492
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AUD 1.0895
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            Optimos 3      
BUK6Q21-30PJ


MOSFETs BUK6Q21-30P/SOT8002/MLPAK33
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Nexperia 2491
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AUD 0.5303
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41 A30 V21.5 mOhmsP - Channel 2.7 V- 55 C+ 175 C56 WSMD/SMTMLPAK33 - 8Reel , Cut TapeSi1 Channel20 V23 nCEnhancement  
BUK9K22-80EX


MOSFET 80V N-CHANNEL LOGIC LEVEL DUA
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Nexperia 2491
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AUD 0.9621
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           Cut Tape       
PSMN3R3-80YSFX


MOSFETs PSMN3R3-80YSF/SOT669/LFPAK
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Nexperia 2490
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AUD 0.9128
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160 A80 V3.1 mOhmsN - Channel 4 V- 55 C+ 175 C254 WSMD/SMTPOWER - SO8 - 4 Si1 Channel- 20 V , + 20 V70 nCEnhancement  
TK20V60W5,LVQ


N-Channel 600 V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8)
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Toshiba 2489
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AUD 2.8239
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20 A600 V156 mOhmsN - Channel 3 V- 55 C+ 150 C156 WSmd/SmtDFN - 5ReelSi1 Channel30 V55 nCEnhancement  
SPW47N60C3FKSA1


MOSFET HIGH POWER_LEGACY
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Infineon 2489
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AUD 12.0545
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   N Channel       Tube       
SI7129DN-T1-GE3


MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
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Vishay 2489
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AUD 0.7138
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   P - Channel  - 50 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
BLM4953


MOSFET P Trench 30V 5.1A 3V @ 250uA 55 mΩ @ 5.1A,10V SOP-8_150mil RoHS
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Belling 2483
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AUD 0.0635
Multiples of: 10

                   
BRCS3401MC


30V 4.2A 52mO@10V,4.2A 1.4W P Channel SOT-23 MOSFETs ROHS
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Blue Rocket 2483
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AUD 0.0328
Multiples of: 5

                   
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