MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSN20


SOT-23 MOSFETs ROHS
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SLKORMICRO 6353
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AUD 0.0175
Multiples of: 50

                   
KIA50N03CD


TO-252 MOSFETs ROHS
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KIA 2502
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AUD 0.0957
Multiples of: 5

                   
DMN2011UTS-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 2488
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AUD 0.3004
Multiples of: 1

21 A20 V7.2 mOhmsN - Channel 400 mV- 55 C+ 150 C1.3 W  Cut TapeSi1 Channel4.5 V24 nCEnhancement  
DMC3021LK4-13


MOSFET MOSFET BVDSS: 25V-30 V-30V,TO252,2.5K
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Diodes Incorporated 2487
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AUD 0.3201
Multiples of: 1

9.4 A , 6.8 A30 V32 mOhms , 53 mOhmsN - Channel, P - Channel  - 55 C+ 150 C2.75 WSmd/SmtTO - 252 - 5Cut TapeSi2 Channel20 V17.4 nCEnhancement  
AGM601LL


60V 223A 178W 1.25m@10V,30A 1.6V@250uA 1PCSNChannel TOLL-8L MOSFETs ROHS
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AGM-Semi 2485
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AUD 0.8527
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CSD13306W


MOSFET 12-V, N channel NexFET power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA
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Texas Instruments 2485
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AUD 0.2216
Multiples of: 1

3.5 A12 V10.2 mOhmsN - Channel     Smd/SmtDSBGA - 6Tape And ReelSi1 Channel10 V Enhancement Nexfet
SIS407DN-T1-GE3


MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
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Vishay 2485
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AUD 0.6754
Multiples of: 1

25 A20 V9.5 mOhmsP - Channel 400 mV- 55 C+ 150 C33 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel4.5 V38 nCEnhancement Trenchfet, Powerpak
FDMS86102LZ


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 2485
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AUD 1.6384
Multiples of: 1

7 A100 V37 mOhmsN - Channel  - 55 C+ 150 C69 WSmd/SmtPOWER - 56ReelSi1 Channel    Powertrench
QS8J4TR


ROHM Semiconductor MOSFET TRANS MOSFET PCH 30V 4A 8PIN
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ROHM 2477
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AUD 0.6961
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4 A30 V40 mOhms , 40 mOhmsP - Channel 2.5 V + 150 C1.5 WSmd/SmtT SMT - 8Tape And ReelSi2 Channel20 V13 nC , 13 nCEnhancement  
IPT063N15N5ATMA1


MOSFET TRENCH >=100V
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Infineon 1727
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AUD 2.8075
Multiples of: 1

122 A150 V6.3 mOhmsN - Channel 4.6 V- 55 C+ 175 C214 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V47 nCEnhancement  
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