MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC028N06NSSCATMA1


MOSFET TRENCH 40<-<100V
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Infineon 5465
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AUD 1.8388
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           Cut Tape       
FDS2572


Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
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ON Semiconductor 2510
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AUD 0.8612
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            Ultrafet®      
CJK3415


20V 4A 37mΩ@4.5V,4A 300mW 560mV@250uA 160pF@10V P Channel 1450pF@10V 17.2nC@4.5V +150℃@(Tj) SOT-23-3L MOSFETs ROHS
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Changjing Electronics Technology 2507
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AUD 0.0834
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IRF5802TRPBF-VB


100V 3.2A null TSOP-6 MOSFETs ROHS
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VBsemi Elec 2507
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AUD 0.1965
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PJQ5528-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2507
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AUD 0.5467
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61 A30 V6 mOhmsN - Channel 2.5 V- 55 C+ 175 C31.3 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V11 nCEnhancementAEC - Q101 
VN2222LL-G-P013


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 2507
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AUD 0.5779
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230 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Bulk 1 Channel30 V Enhancement  
TPH1R306PL1,LQ


MOSFETs UMOS9 SOP-ADV(N) RDSon=1.34mohm(max)
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Toshiba 2505
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AUD 2.5284
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IPB180P04P4-03


Infineon Technologies MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2
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Infineon 2505
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AUD 3.5595
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- 180 A- 40 V2.8 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V190 nC Aec - Q101Optimos
IPB010N06N


Infineon Technologies MOSFET N-Ch 60V 180A D2PAK-6
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Infineon 2505
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AUD 4.3179
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180 A60 V1 mOhmsN - Channel20 V2.1 V- 55 C+ 175 C300 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V208 nCEnhancement Optimos
HYG210P06LQ1C2


PPAK5*6-8L MOSFETs ROHS
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HuaYi 2182
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AUD 0.221
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