MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AGM3415E


20V 5A 28m@4.5V,4A 1.32W 700mV@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS
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AGM-Semi 2541
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AUD 0.0361
Multiples of: 10

                   
SI2399BDS-T1-GE3


MOSFETs P-CHANNEL 20-V (D-S) MOSFET
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Vishay 2541
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AUD 0.1182
Multiples of: 1

                   
BUK9Y29-40E,115


N-Channel 40 V 25A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 2541
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AUD 0.2496
Multiples of: 1

25 A40 V25.8 mOhmsN - Channel10 V1.7 V- 55 C+ 175 C37 WSmd/SmtLFPAK56 - 4Reel   5 nC   
SIA527DJ-T1-GE3


MOSFET 12V 29mOhm@4.5V 4.5A N-CH
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Vishay 2541
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AUD 0.3425
Multiples of: 1

4.5 A12 V41 mOhmsN And P - Channel+/- 8 V1 v , - 1 V- 55 C+ 150 C7.8 WSmd/SmtPOWERPAK SC - 70 - 6 DUALReelSi  5.6 nCEnhancement Trenchfet
ISZ019N03L5SATMA1


30V 1.9mO@20A,10V N Channel TSDSON-8-FL MOSFETs ROHS
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Infineon 2540
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AUD 0.7503
Multiples of: 1

40 A30 V1.9 mOhmsN - Channel 1.2 V- 55 C+ 150 C-SMD/SMTTDSON - 8Optimos ~ Strongirfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V22 nCEnhancement OptiMOS ~ StrongIRFET
Si4128DY-T1-E3


MOSFET 30V 10.9A 5.0W 24mohm @ 10V
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Vishay 2539
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AUD 0.3415
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
DMP3018SSS-13


MOSFET MOSFET BVDSS: 25V~30V SO-8 T&R 2.5K
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Diodes Incorporated 2539
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AUD 0.3957
Multiples of: 1

10.5 A30 V12 mOhmsP - Channel 3 V- 55 C+ 150 C10 WSmd/SmtSO - 8Cut TapeSi1 Channel25 V57 nCEnhancement  
SQ2301CES-T1_GE3


MOSFETs P-CHANNEL 20-V (D-S) 175C MOSFET
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Vishay 2538
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AUD 0.1428
Multiples of: 1

3.9 A20 V120 mOhmsP - Channel 1.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3 Si1 Channel 5.4 nCEnhancement  
30N03A


30V 100A 5.5mΩ@10V 2.5V null TO-252-2L MOSFETs ROHS
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HXY MOS 2526
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AUD 0.1209
Multiples of: 5

                   
HSM20N02


SOP-8 MOSFETs ROHS
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HUASHUO 771
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AUD 0.1213
Multiples of: 5

                   
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