MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
8205A-JSM


TSSOP-8 MOSFETs ROHS
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JSMSEMI 11397
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AUD 0.0409
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SL3402


MOSFET N Trench 20V 4A 1.5V @ 250uA 50 mΩ @ 4A,10V SOT-23 RoHS
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SLKORMICRO 2560
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AUD 0.0341
Multiples of: 20

                   
DMN3190LDW-7


MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
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Diodes Incorporated 2560
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AUD 0.0991
Multiples of: 5

1 A30 V190 mOhmsN - Channel20 V1.5 V- 55 C+ 150 C320 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel10 V2 nCEnhancement  
HKTD4N65


650V 4A N Channel TO-252 MOSFETs ROHS
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Hottech 2560
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AUD 0.1709
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IPG20N06S2L-65


MOSFET Dual N-Ch 55V MOSFET
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Infineon 2560
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AUD 0.6173
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20 A55 V65 mOhmsN - Channel  - 55 C+ 175 C43 WSmd/SmtTDSON - 8ReelSi2 Channel20 V9.4 nC Aec - Q101Optimos
SI4455DY


SOIC-8 MOSFETs ROHS
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TECH PUBLIC 2559
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AUD 0.4503
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NCE65T540K


MOSFET N Trench 650V 8A 4V @ 250uA 540 mΩ @ 4A,10V TO-252 RoHS
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NCE Power 2559
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AUD 0.4963
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IRFP254PBF


N-Channel 250 V 23A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 2559
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AUD 2.9388
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23 A250 V140 mOhmsN - Channel 2 V- 55 C+ 150 C190 WThrough HoleTO - 247ACTubeSi1 Channel10 V140 nCEnhancement  
SI4386DY-T1-E3


N-Channel 30 V 11A (Ta) 1.47W (Ta) Surface Mount 8-SOIC
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Vishay 2558
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AUD 1.1792
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   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel       
CJ2305A


SOT-23 MOSFETs ROHS
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Changjing Electronics Technology 2551
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AUD 0.0548
Multiples of: 10

                   
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