MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2300


20V 6.2A 19.4mO@4.5V,4A 1.56W N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microdiode Electronics 5412
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AUD 0.0222
Multiples of: 20

                   
AO7407


Transistor: P-MOSFET; unipolar; -20V; -1A; 400mW; SOT323
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Alpha & Omega 2556
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AUD 0.1672
Multiples of: 1

                   
HSU60P02


MOSFET P Channel 20V 60A 1.0V @ 250uA 8.5mΩ @ 15A,4.5V TO-252 RoHS
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HUASHUO 2555
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AUD 0.2394
Multiples of: 5

                   
DMN2501UFB4-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 3K
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Diodes Incorporated 2553
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AUD 0.1231
Multiples of: 1

1 A20 V700 mOhmsN - Channel 500 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtX2 - DFN1006 - 3ReelSi1 Channel8 V2 nCEnhancement  
FDT86256


N-Channel 150 V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4
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ON Semiconductor 2553
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AUD 1.0403
Multiples of: 1

1.2 A150 V695 mOhmsN - Channel 3.5 V  2.3 WSmd/SmtSOT - 223ReelSi1 Channel20 V1.2 nC  Powertrench
IAUA180N04S5N012AUMA1


MOSFET_(20V 40V)
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Infineon 2553
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AUD 1.5581
Multiples of: 1

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IPD075N03LGATMA1


Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
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Infineon 2552
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AUD 0.3743
Multiples of: 1

            Optimos 3      
PMV213SN,215


100V 0.29A 350mW 2.7@10V,0.2A 2.5V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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ElecSuper 2551
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AUD 0.0556
Multiples of: 10

                   
AON2411


Transistor: P-MOSFET; unipolar; -12V; -15.5A; 3.2W; DFN2x2C
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Alpha & Omega 1886
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AUD 0.4388
Multiples of: 1

                   
HSBA3048


30V 100A 1.3mΩ@10V,20A 63W 1.6V@250uA 196pF@15V N Channel 3.432nF@15V 45nC@10V -55℃~+150℃@(Tj) PRPAK5x6 MOSFETs ROHS
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HUASHUO 64
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AUD 0.4824
Multiples of: 1

                   
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