MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIZF920DT-T1-GE3


MOSFET Dual 30V Vds PowerPAIR 6x5F
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 2522
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AUD 0.7604
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76 A , 197 A30 V3.07 mOhms , 1.05 mOhmsN - Channel 1.1 V- 55 C+ 150 C28 w , 74 WSmd/SmtPowerpair 6X5FCut TapeSi2 Channel- 16 v , 20 v , - 12 v , 16 v29 nC , 125 nCEnhancement Trenchfet; Powerpak
SI7112DN-T1-GE3


Vishay Semiconductors MOSFET 30V 17.8A 3.8W 7.5mohm 10V
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Vishay 2522
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AUD 1.8298
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11.3 A30 V7.5 mOhmsN - Channel  - 55 C+ 150 C1.5 WSmd/SmtPOWERPAK - 1212 - 8ReelSi 12 V Enhancement Trenchfet
PJQ4433EP-AU_R2_002A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2519
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AUD 0.5451
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68 A30 V8.8 mOhmsP - Channel 2.5 V- 55 C+ 175 C65 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V54 nCEnhancementAEC - Q101 
DN2450K4-G


MOSFET N Trench 500V 350mA (Tj) 10 Ω @ 300mA,0V TO-252-2 (DPAK) RoHS
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Microchip 2519
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AUD 1.591
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BXT270N02M


Transistor: N-MOSFET
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Bridgelux 2517
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AUD 0.0919
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SP60N30TH


TO-252 MOSFETs ROHS
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Siliup 2517
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AUD 0.1011
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SSM3K361R.LF


SOT-23-3 MOSFETs ROHS
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Toshiba 2517
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AUD 0.1549
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SI2356DS-T1-GE3


N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 2517
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AUD 0.2466
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4.3 A40 V56 mOhmsN - Channel12 V1.5 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V8.1 nCEnhancement Trenchfetr
HYG053N10NS1D


TO-252 MOSFETs ROHS
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HuaYi 2517
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AUD 0.5716
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BSC026NE2LS5ATMA1


Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
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Infineon 2517
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AUD 0.6419
Multiples of: 1

82 A25 V4 mOhmsN - Channel 1.2 V- 55 C+ 150 C29 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 16 V , 16 V12 nCEnhancement OptiMOS
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